Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

10.1520/f0095-89r95e01 ◽

1995 ◽

Author(s):

Keyword(s):

Test Method ◽

Epitaxial Layers ◽

Silicon Substrates ◽

Doped Silicon ◽

Heavily Doped

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Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

10.1520/f0095-89r00 ◽

2000 ◽

Author(s):

Keyword(s):

Test Method ◽

Epitaxial Layers ◽

Silicon Substrates ◽

Doped Silicon ◽

Heavily Doped

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Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f1366-92r97e01 ◽

1997 ◽

Author(s):

Keyword(s):

Mass Spectrometry ◽

Oxygen Concentration ◽

Secondary Ion Mass Spectrometry ◽

Test Method ◽

Silicon Substrates ◽

Doped Silicon ◽

Ion Mass Spectrometry ◽

Heavily Doped ◽

Secondary Ion

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Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f1366-92r02 ◽

2002 ◽

Author(s):

Keyword(s):

Mass Spectrometry ◽

Oxygen Concentration ◽

Secondary Ion Mass Spectrometry ◽

Test Method ◽

Silicon Substrates ◽

Doped Silicon ◽

Ion Mass Spectrometry ◽

Heavily Doped ◽

Secondary Ion

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Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f1366 ◽

2003 ◽

Author(s):

Keyword(s):

Mass Spectrometry ◽

Oxygen Concentration ◽

Secondary Ion Mass Spectrometry ◽

Test Method ◽

Silicon Substrates ◽

Doped Silicon ◽

Ion Mass Spectrometry ◽

Heavily Doped ◽

Secondary Ion

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Photoluminescence Properties of Epitaxial Layers on Highly Doped Silicon Substrates

phys stat sol (a) ◽

10.1002/pssa.2211290131 ◽

1992 ◽

Vol 129 (1) ◽

pp. K5-K10

Author(s):

G. Schramm

Keyword(s):

Epitaxial Layers ◽

Silicon Substrates ◽

Photoluminescence Properties ◽

Doped Silicon

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Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f1528 ◽

2003 ◽

Author(s):

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Test Method ◽

Silicon Substrates ◽

Type Silicon ◽

Ion Mass Spectrometry ◽

Heavily Doped ◽

Secondary Ion

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Titanium disilicide formation on heavily doped silicon substrates

Journal of Applied Physics ◽

10.1063/1.338337 ◽

1987 ◽

Vol 61 (11) ◽

pp. 5110-5117 ◽

Cited By ~ 114

Author(s):

Robert Beyers ◽

Don Coulman ◽

Paul Merchant

Keyword(s):

Silicon Substrates ◽

Titanium Disilicide ◽

Doped Silicon ◽

Heavily Doped

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Titanium silicide growth by rapid-thermal processing of Ti films deposited on lightly doped and heavily doped silicon substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583649 ◽

1987 ◽

Vol 5 (6) ◽

pp. 1689 ◽

Cited By ~ 16

Author(s):

N. de Lanerolle

Keyword(s):

Thermal Processing ◽

Rapid Thermal Processing ◽

Titanium Silicide ◽

Silicon Substrates ◽

Doped Silicon ◽

Silicide Growth ◽

Heavily Doped ◽

Ti Films

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Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f1528-94r99 ◽

1999 ◽

Author(s):

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Test Method ◽

Silicon Substrates ◽

Type Silicon ◽

Ion Mass Spectrometry ◽

Heavily Doped ◽

Secondary Ion

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