Titanium silicide growth by rapid-thermal processing of Ti films deposited on lightly doped and heavily doped silicon substrates

1987 ◽  
Vol 5 (6) ◽  
pp. 1689 ◽  
Author(s):  
N. de Lanerolle
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Doped Silicon ◽  
Silicide Growth ◽  
Heavily Doped ◽  
Ti Films

The Effects of Processing Ambient on the Reaction Rate of Ti and Si Using Rapid Thermal Processing

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Kermani ◽  
K. Farnam ◽  
T. Stultz
Keyword(s):  
Thin Layer ◽  
Thermal Processing ◽  
Reaction Rate ◽  
Sintering Temperature ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
The Self ◽  
Silicide Film ◽  
Sputter Deposited ◽  
Ti Films

AbstractThe reaction rate of sputter deposited Ti films on c-Si as a function of process ambient was studied. Sintering temperatures ranging from 600 to 1100° C, under pure ammonia, forming gas, nitrogen and argon were used. The additional effect of a reactively sputtered TiN cap on the reaction rate was also investigated. Processed films were then analyzed using AES, RBS and four point probe resistivity mapping. It was found that for temperatures below 700° C, an ammonia ambient has the most pronounced effect on reducing the rate of formation of titanium silicide, followed by forming gas (N 2/H2 10% vol), nitrogen and argon. Additionally, the presence of the TiN cap further reduced the reaction rate while exhibiting significant diffusion of nitrogen into the silicide film. For the samples annealed in ambients containing nitrogen, a thin layer of Tix Ny was simultaneously formed on top of the silicide film. The thickness and Stoichiometry of this titanium nitride films were then correlated with the sintering temperature and ambient. The details of these findings and their impact on the formation of the self-aligned titanium silicide (salicide) will be presented.

Formation of titanium silicide films by rapid thermal processing

1983 ◽  
Vol 4 (10) ◽  
pp. 380-382 ◽  
Author(s):  
R.A. Powell ◽  
R. Chow ◽  
C. Thridandam ◽  
R.T. Fulks ◽  
I.A. Blech ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Silicide

Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Partial Transparency Effects of Silicon During Rapid Thermal Processing

1998 ◽  
Vol 525 ◽  
Author(s):  
A. R. Abramson ◽  
H. Tadal ◽  
P. Nieva ◽  
P. Zavracky ◽  
I. N. Miaoulis ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Multilayer Film ◽  
Rapid Thermal Processing ◽  
Considerable Effect ◽  
Film Structure ◽  
Free Carrier ◽  
Radiative Properties ◽  
Heavily Doped ◽  
Absorption Characteristics

ABSTRACTThe radiative properties of a silicon wafer undergoing Rapid Thermal Processing (RTP) are contingent upon the doping level of the silicon substrate and film structure on the wafer, and fluctuate drastically with temperature and wavelength. For a lightly doped substrate, partial transparency effects must be considered that significantly affect absorption characteristics. Band gap, free carrier, and lattice absorption are the dominant absorption mechanisms and either individually or in concert have considerable effect on the overall absorption coefficient of the silicon wafer. At high doping levels, partial transparency effects dissipate, and the substrate may be considered optically thick. A numerical model has been developed to examine partial transparency effects, and to compare lightly doped (partially transparent) and heavily doped (opaque) silicon wafers with a multilayer film structure during RTP.

A parametric study of titanium silicide formation by rapid thermal processing

1996 ◽  
Vol 11 (2) ◽  
pp. 412-421 ◽  
Author(s):  
A. V. Amorsolo ◽  
P. D. Funkenbusch ◽  
A. M. Kadin
Keyword(s):  
Sheet Resistance ◽  
Parametric Study ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Wet Etching ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Sputter Etching

A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.

Titanium silicide/p-Si Schottky barriers formed by rapid thermal processing in nitrogen

1991 ◽  
Vol 34 (8) ◽  
pp. 827-834 ◽  
Author(s):  
W. De Bosscher ◽  
R.L. Van Meirhaeghe ◽  
W.H. Laflère ◽  
F. Cardon
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Schottky Barriers ◽  
Titanium Silicide

On The Resistivity Increase of Heavily Doped n-Type Si by Rapid Thermal Processing

2013 ◽  
Vol 52 (1) ◽  
pp. 683-689 ◽  
Author(s):  
X. Zhang ◽  
X. Ma ◽  
C. Gao ◽  
T. Xu ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Heavily Doped

Effect of doping level during rapid thermal processing of multilayer structures

1999 ◽  
Vol 14 (6) ◽  
pp. 2402-2410 ◽  
Author(s):  
A. R. Abramson ◽  
P. Nieva ◽  
H. Tada ◽  
P. Zavracky ◽  
I. N. Miaoulis ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature History ◽  
Multilayer Structures ◽  
Interference Effects ◽  
Heating Rates ◽  
History Of ◽  
Heavily Doped ◽  
Thin Film Interference ◽  
Maximum Heating

A numerical model has been developed to examine the temperature history of a multilayer wafer undergoing rapid thermal processing (RTP) for various doping densities. Partial transparency and thin film interference effects are considered. Doping levels from ∼1015 to ∼1018 cm−3 are examined. Numerical temperature predictions of the lightly doped wafer are compared with experimental measurements. Heating rates for the lightly doped wafer fluctuate due to partial transparency effects and reach a maximum of ∼50 °C/s. The heavily doped wafer sees a maximum heating rate of ∼100 °C/s. Because the wafers are opaque above 700 °C regardless of their level of doping, all wafers reach steady state at ∼845 °C.

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