Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry

10.1520/f1366 ◽  
2003 ◽  
Author(s):  
Keyword(s):  
Mass Spectrometry ◽  
Oxygen Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Test Method ◽  
Silicon Substrates ◽  
Doped Silicon ◽  
Ion Mass Spectrometry ◽  
Heavily Doped ◽  
Secondary Ion

Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures

2001 ◽  
Vol 669 ◽  
Author(s):  
M. S. Carroll ◽  
J. C. Sturm ◽  
E. Napolitani ◽  
D. De Salvador ◽  
M. Berti ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Carbon Atom ◽  
Secondary Ion Mass Spectrometry ◽  
Interstitial Atom ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Silicon Carbon ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTThe effect of annealing silicon capped pseudomorphic Si0.7865Ge0.21C0.0035 or Si0.998C0.002 layers on silicon substrates in nitrogen or oxygen at 850°C was examined using x-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS). Most substitutional carbon is lost from the alloy layers due to carbon out-diffusion rather than from precipitation. The carbon is found to diffuse more rapidly out of the SiGeC layer than the SiC layer after nitrogen and the carbon is found to leave the sample entirely, an effect that is enhanced by oxidation and thin cap layers. All substitutional carbon can be removed from the sample in some cases implying negligible formation of silicon-carbon complexes. Furthermore, it is found that each injected silicon interstitial atom due to oxidation causes the removal of one additional carbon atom for the SiGeC layer.

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