Titanium disilicide formation on heavily doped silicon substrates

1987 ◽  
Vol 61 (11) ◽  
pp. 5110-5117 ◽  
Author(s):  
Robert Beyers ◽  
Don Coulman ◽  
Paul Merchant
Keyword(s):  
Silicon Substrates ◽  
Titanium Disilicide ◽  
Doped Silicon ◽  
Heavily Doped

Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
Minhua Li ◽  
Q. Wang
Keyword(s):  
Damage Zone ◽  
Hydrogen Ion ◽  
Silicon Substrates ◽  
Hydrogen Distribution ◽  
Implantation Energy ◽  
Defect Zone ◽  
Atomic Force ◽  
Boron Doped ◽  
Doped Silicon ◽  
Heavily Doped

AbstractThe defects caused by hydrogen ion (H+) implantation were studied for heavily arsenic (As), boron (B), and phosphorous (P) doped (100) silicon substrates. At the implantation energy of 170keV, H+ beam generates defect zones in both arsenic and boron doped silicon wafers. The width of implant damage zone in the heavily As-doped silicon increased from 138nm to 415nm when H+ ion implant dose increased from1×1016 ion//cm2 to 5×1016 ion/cm2, respectively. This dependence is however, opposite in the heavily B-doped substrate. The defect zone decreased with increasing H+ ion dose. The second ion mass spectrometry (SIMS) data show that in both heavily As- and P-doped silicon substrates, hydrogen distribution was governed by both H+-dopant pairing reaction and the amount of the crystal damage, whereas it is exclusively determined by pairing reaction in heavily B-doped silicon substrates. The atomic force microscope (AFM) measurement indicated that the rms roughness of the as-exfoliated surface was 18.86nm, 13.06nm, and 6.79nm for P-, As- and B-doped silicon substrates, respectively. An rms roughness improvement of 20nm-170nm was observed when wafers were annealed at 270°C.

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