scholarly journals Nitride film Growth by Near-Atmospheric Nitrogen Plasma-Assisted Chemical Vapor Deposition

2010 ◽  
Vol 35 (3) ◽  
pp. 579-582
Author(s):  
T. Nagata ◽  
M. Haemori ◽  
J. Anzai ◽  
T. Uehara ◽  
T. Chikyow
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Nitride Film ◽  
Atmospheric Nitrogen

Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

2009 ◽  
Vol 105 (6) ◽  
pp. 066106 ◽  
Author(s):  
T. Nagata ◽  
M. Haemori ◽  
Y. Sakuma ◽  
T. Chikyow ◽  
J. Anzai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Hydrogen Effect ◽  
Atmospheric Nitrogen ◽  
Gan Film

Nitride film growth morphology using remote plasma enhanced chemical vapor deposition

2007 ◽  
Vol 4 (7) ◽  
pp. 2285-2288 ◽  
Author(s):  
M. Wintrebert-Fouquet ◽  
K. S. A. Butcher ◽  
P. P.-T. Chen ◽  
R. Wuhrer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Growth Morphology ◽  
Remote Plasma

Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Gallium Nitride Film

Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Gallium Nitride Film

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

Sign in / Sign up

Export Citation Format

Share Document