Nitride film growth morphology using remote plasma enhanced chemical vapor deposition

2007 ◽  
Vol 4 (7) ◽  
pp. 2285-2288 ◽  
Author(s):  
M. Wintrebert-Fouquet ◽  
K. S. A. Butcher ◽  
P. P.-T. Chen ◽  
R. Wuhrer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Growth Morphology ◽  
Remote Plasma

Zn1-xCdxO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 43 (No. 8B) ◽  
pp. L1088-L1090 ◽  
Author(s):  
Satoshi Shigemori ◽  
Atsushi Nakamura ◽  
Junji Ishihara ◽  
Toru Aoki ◽  
Jiro Temmyo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Remote Plasma ◽  
Metalorganic Chemical

Interfacial Properties of Si-Si3N4formed by Remote Plasma Enhanced Chemical Vapor Deposition

1999 ◽  
Vol 567 ◽  
Author(s):  
V. Misra ◽  
H. Lazar ◽  
M. Kulkami ◽  
Z. Wang ◽  
G. Lucovsky ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Interfacial Properties ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Remote Plasma ◽  
Intrinsic Nature ◽  
Constraint Theory

ABSTRACTThis paper presents results on the interfacial properties of Si3N4on NMOSFETs and PMOSFETs. Silicon nitride, formed by remote plasma enhanced chemical vapor deposition, was found to display severely degraded interfacial properties, in which the PMOS interfaces were significantly more degraded than NMOS interfaces. This is believed to be indicative of a relatively high density of interface traps located below the Si mid-gap that inhibit hole channel formation. These traps are believed to originate from the intrinsic nature of Si- Si3N4interface. Bonding constraint theory was applied to conclude that the Si-Si3N4interface is over-constrained compared to the Si-SiO2interface and consequently results in a higher intrinsic defectivity. A systematic study of the oxygen and hydrogen content in the silicon nitride film and its effect on electrical properties is also presented. Based on the electrical results it is concluded that the presence of oxygen either as a) a monolayer at the interface or b) within the silicon nitride film can produce high quality interfaces suitable for aggressively scaled CMOS devices.

Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Gallium Nitride Film

Gallium Nitride Film Growth Using a Plasma Based Migration Enhanced Afterglow Chemical Vapor Deposition System

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AF02 ◽  
Author(s):  
K. Scott A. Butcher ◽  
Brad W. Kemp ◽  
Ilian B. Hristov ◽  
Penka Terziyska ◽  
Peter W. Binsted ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitride Film ◽  
Gallium Nitride Film

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

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