Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth

2009 ◽  
Vol 105 (6) ◽  
pp. 066106 ◽  
Author(s):  
T. Nagata ◽  
M. Haemori ◽  
Y. Sakuma ◽  
T. Chikyow ◽  
J. Anzai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Nitrogen Plasma ◽  
Hydrogen Effect ◽  
Atmospheric Nitrogen ◽  
Gan Film

Characterizations of GaN film growth by ECR plasma chemical vapor deposition

2009 ◽  
Vol 311 (12) ◽  
pp. 3325-3331 ◽  
Author(s):  
Silie Fu ◽  
Junfang Chen ◽  
Hongbin Zhang ◽  
Chaofen Guo ◽  
Wei Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Ecr Plasma ◽  
Gan Film

Heteroepitaxial growth of 3C–SiC film on Si(100) substrate by plasma chemical vapor deposition using monomethylsilane

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Single Molecule ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Sic Film

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface

Film Growth Mechanism of Photo-Chemical Vapor Deposition

1987 ◽  
Vol 105 ◽  
Author(s):  
T. Inushima ◽  
N. Hirose ◽  
K. Urata ◽  
K. Ito ◽  
S. Yamazaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Decay Constant ◽  
Film Growth ◽  
Chemical Vapor ◽  
Active Species ◽  
Surface Migration ◽  
Show Temperature Dependence ◽  
Substrate Size

AbstractThe photo-chemical vapor deposition (CVD) of SiO2 and SiN2 were investigated using 185 nm light of a low pressure mercury lamp. The film thickness deposited on the substrate was the function of the distance from the substrate to the light source and its relation was investigated by changing the reaction pressure. From these investigations, the space migration length of the active species was estimated, which was, at the processing pressure of 400 Pa, about 10–20 mm. This migration length was confirmed by a model calculation. The step coverage of the film was investigated by the use of a two-dimensional capillary cavity. It was shown that the thickness decayed exponentially with the depth in the cavity. The decay constant did not show temperature dependence. From this result, the surface migration of the active species produced by photo-CVD was reported. To confirm this migration we presented a substrate- size effect of photo-CVD, which became obvious when the substrate size became smaller than the space migration length of the active species. From these results, the film growth mechanism of photo-CVD was discussed.

Selectively Aligned Polymer Film Growth on Obliquely Evaporated SiO2Pattern by Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 2, No. 7B) ◽  
pp. L980-L982 ◽  
Author(s):  
Tetsuzo Yoshimura ◽  
Katsusada Motoyoshi ◽  
Satoshi Tatsuura ◽  
Wataru Sotoyama ◽  
Azuma Matsuura ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Polymer Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor
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