scholarly journals Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector

2021 ◽  
Author(s):  
Baibin Wang ◽  
Liu Zongshun ◽  
De Zhao ◽  
Feng liang ◽  
Jing Yang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage ◽  
Photoluminescence Intensity ◽  
Spectral Responsivity

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

2008 ◽  
Vol 23 (10) ◽  
pp. 105015 ◽  
Author(s):  
Shuang Zhang ◽  
D G Zhao ◽  
D S Jiang ◽  
W B Liu ◽  
L H Duan ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage

Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias

2015 ◽  
Vol 117 (13) ◽  
pp. 134503 ◽  
Author(s):  
Mahmoud R. M. Atalla ◽  
Zhenyu Jiang ◽  
Jie Liu ◽  
Li Wang ◽  
S. Ashok ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Spectral Responsivity

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier

2006 ◽  
Vol 40 (2) ◽  
pp. 234-239
Author(s):  
J. A. Berashevich ◽  
S. K. Lazarouk ◽  
V. E. Borisenko
Keyword(s):  
Porous Silicon ◽  
Schottky Barrier ◽  
Bias Voltage ◽  
Reverse Bias ◽  
Reverse Bias Voltage

Analysis and Simulation of Temperature and I-V Characteristics for SiC Schottky Barrier Diodes

2014 ◽  
Vol 875-877 ◽  
pp. 690-694
Author(s):  
Bo Yuan ◽  
Shi Bin Chen ◽  
Xiao Jia
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage ◽  
Reverse Current ◽  
Simulation Software ◽  
Schottky Barrier Diode ◽  
Forward Voltage ◽  
Current Voltage ◽  
Different Temperatures ◽  
Current Voltage Characteristics

In this paper, semiconductor simulation software ISE TCAD 10.0 was used to simulate W/SiC SBD forward voltage characteristics and reverse voltage characteristics at different temperatures on the basis of theoretical analysis, and the valuable results were achieved. Under the temperature range from 73 K to 773 K, the simulation results of W/SiC Schottky barrier diode forward voltage characteristics showed that forward characteristics were significant influenced by the temperature. At room temperature (303K), if bias voltage was low, the current will be exponential growing with voltage, and the turn-on voltage of W/SiC Schottky barrier diode was about 0.2V. If bias voltage was high, the current increased will be high, and the series resistance effect will become obvious. Under lower bias (2V), a different temperature from 73K to 573K had small impact on reverse current-voltage characteristics. The results showed that the device had the good rectifier characteristics, small reverse current, high breakdown voltage, and the device can steadily and long-term work in high temperature and other complex environment.

PtSi–n–Si Schottky‐barrier photodetectors with stable spectral responsivity in the 120–250 nm spectral range

1996 ◽  
Vol 69 (24) ◽  
pp. 3662-3664 ◽  
Author(s):  
K. Solt ◽  
H. Melchior ◽  
U. Kroth ◽  
P. Kuschnerus ◽  
V. Persch ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Spectral Range ◽  
Spectral Responsivity
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