Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias

2015 ◽  
Vol 117 (13) ◽  
pp. 134503 ◽  
Author(s):  
Mahmoud R. M. Atalla ◽  
Zhenyu Jiang ◽  
Jie Liu ◽  
Li Wang ◽  
S. Ashok ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Spectral Responsivity

Effect of reverse-bias annealing and zero-bias annealing on a hydrogen-containing Au/(n-type GaAs) Schottky barrier

1993 ◽  
Vol 48 (24) ◽  
pp. 17986-17994 ◽  
Author(s):  
M. H. Yuan ◽  
H. Z. Song ◽  
S. X. Jin ◽  
H. P. Wang ◽  
Y. P. Qiao ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Zero Bias

Bias Annealing Effect on Hydrogen-Containing Au/N-Silicon Schottky Barrier

1993 ◽  
Vol 319 ◽  
Author(s):  
M.H. Yuan ◽  
Y.Q. Jia ◽  
G.G. Qin
Keyword(s):  
Schottky Barrier ◽  
Reverse Bias ◽  
Annealing Temperature ◽  
Interface States ◽  
Annealing Effect ◽  
Reversible Change ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Hydrogen Incorporation

AbstractAu/n-Si Schottky barrier (SB) incorporated by hydrogen has a 0.13 eV lower SB height (SBH) than that without hydrogen incorporation. For the hydrogen-containing SB, zero bias annealing (ZBA) decreases the SBH while reverse bias annealing (RBA) increases it. Besides, the ZBA and RBA cycling experiments reveal a reversible change of the SBH with in at least three cycles. The higher annealing temperature of RBA results in higher SBH. We interpret the above experimental facts as that hydrogen has an effect on metal-semiconductor interface states and then on the SBH, and both the bias on SB and temperature of annealing can influence the hydrogen effects on metal-semiconductor interface states.

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

The Study of the Optoelectronic Properties of a-SiGe:H Photodiodes

1991 ◽  
Vol 219 ◽  
Author(s):  
L. C. Kuo ◽  
C. C. Lee ◽  
K. H. Chen ◽  
Y. K. Fang ◽  
C. H. Yu
Keyword(s):  
Schottky Barrier ◽  
Layer Thickness ◽  
Quantum Efficiency ◽  
Reverse Bias ◽  
Low Cost ◽  
Schottky Barrier Diode ◽  
Band Gaps ◽  
Pin Diode ◽  
Schottky Barrier Diodes ◽  
Infrared Photodetector

ABSTRACTWe have studied the spectrum of various types of a-SiGe:H alloys for pin and Schottky barrier photodlodes, in which the band gaps of the a-SiGe:H vary between 1.75 eV and 1.35 eV. It has been found that the spectral re-ponse of the Schottky barrier diode shifts significantly to longer wavelength and the quantum efficiency decreases with an increase in i layer thickness. However, for the pin diode, an increase in the i layer thickness can hardly shift the spectrum to longer wavelength. For both pin and Schottky barrier diodes, the quantum efficiency can be increased by increasing the reverse bias. Therefore, an enhanced spectrum with a maximum at 800nm and a tail to lun can be achieved for a reverse-biased a-SiGe:H Schottky barrier diode. The results indicate that a-SiGe:H has a great potential for a low cost infrared photodetector.

Reliability concern of quasi-vertical GaN Schottky barrier diode under high temperature reverse bias stress

2019 ◽  
Vol 130 ◽  
pp. 233-240
Author(s):  
Sheng Li ◽  
Chi Zhang ◽  
Siyang Liu ◽  
Jiaxing Wei ◽  
Long Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
Bias Stress

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier

2006 ◽  
Vol 40 (2) ◽  
pp. 234-239
Author(s):  
J. A. Berashevich ◽  
S. K. Lazarouk ◽  
V. E. Borisenko
Keyword(s):  
Porous Silicon ◽  
Schottky Barrier ◽  
Bias Voltage ◽  
Reverse Bias ◽  
Reverse Bias Voltage
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