The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

2010 ◽  
Vol 120 (1) ◽  
pp. 322-328 ◽  
Author(s):  
Habibe Uslu ◽  
Şemsettin Altındal ◽  
Tuncay Tunç ◽  
İbrahim Uslu ◽  
Tofig S. Mammadov
Keyword(s):  
Dielectric Properties ◽  
Polyvinyl Alcohol ◽  
Schottky Barrier ◽  
Bias Voltage ◽  
Illumination Intensity ◽  
Schottky Barrier Diodes ◽  
Applied Bias ◽  
Applied Bias Voltage

Dielectric properties and electric modulus of Au/PPy/n-Si (MPS) type Schottky barrier diodes (SBDS) as a function of frequency and applied bias voltage

2015 ◽  
Vol 29 (13) ◽  
pp. 1550075 ◽  
Author(s):  
İbrahim Yücedağ ◽  
Gülçin Ersöz ◽  
Ahmet Gümüş ◽  
Şemsettin Altındal
Keyword(s):  
Schottky Barrier ◽  
Bias Voltage ◽  
Surface States ◽  
Organic Layer ◽  
Schottky Barrier Diodes ◽  
Applied Bias Voltage ◽  
Ac Electrical Conductivity ◽  
Zero Bias ◽  
Peak Intensity ◽  
Tan Δ

Au/PPy/n-Si Schottky barrier diodes (SBDs) were fabricated by forming polypyrrole (PPy) organic layer on n-Si using the spin coating technique. Frequency-dependent dielectric constant (ε′), dielectric loss (ε″), loss tangent ( tan δ), real and imaginary parts of electrical modulus (M′ and M″) and AC electrical conductivity (σ ac ) parameters of the structure were investigated in the frequency range of 10–500 kHz. It was found that the values of the ε′, ε″ and tan δ, in general, decrease with increasing frequency while an increase is observed in σ ac , M′ and M″. The tan δ and M″ also exhibit a peak at about zero-bias voltage, while peak intensity weakens with increasing frequency. The values of ε′ and M′ decrease with increasing voltage while an increase is observed in ε″, tan δ, σ ac and M″. These changes in ε′, ε″, tan δ, M′, M″ and σ ac values was attributed to surface charge polarization and the particular density distribution of surface states localized at PPy/n-Si interface.

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Laser-Induced Growth of Titanium Nitride Microcolumns on Biased Titanium Targets

2005 ◽  
Vol 20 (1) ◽  
pp. 62-67 ◽  
Author(s):  
E. György ◽  
A. Pérez del Pino ◽  
P. Serra ◽  
J.L. Morenza
Keyword(s):  
Bias Voltage ◽  
Single Pulse ◽  
Laser Pulses ◽  
High Repetition Rate ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Surface Microrelief ◽  
High Repetition ◽  
Melting Threshold ◽  
Biased Samples

Titanium targets with a bias voltage ranging from −500 to +500 V were submitted to multipulse high repetition rate Nd:yttrium aluminum garnet (YAG; λ = 1.064 μm, τ ∼ 300 ns, ν = 30 kHz) laser irradiations in nitrogen at intensity values below the single-pulse melting threshold. The morphology of the TiN structures formed under the cumulative action of the laser pulses on the surface of the unbiased and biased targets was investigated by profilometry and scanning electron microscopy. Under these irradiation conditions, a specific columnar surface microrelief developed. The height of the microcolumns reached about 10–15 μm, and their diameter about 1–2 μm. The development of TiN microcolumns was enhanced by the applied bias voltage. The enhancement in the negative biased samples was stronger than that in the positive biased ones.

The effect of gamma irradiation on electrical characteristics of Au/polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes

2010 ◽  
Vol 118 (1) ◽  
pp. 596-603 ◽  
Author(s):  
İ. Taşçıoğlu ◽  
H. Uslu ◽  
Ş. Altındal ◽  
P. Durmuş ◽  
İ. Dökme ◽  
...  
Keyword(s):  
Polyvinyl Alcohol ◽  
Gamma Irradiation ◽  
Schottky Barrier ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes

scholarly journals Simulation of a Complete Chain of QCA Cells with Realistic Potentials

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 149-153
Author(s):  
M. Girlanda ◽  
M. Macucci
Keyword(s):  
Numerical Simulation ◽  
Bias Voltage ◽  
Polarization State ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Voltage Unbalance ◽  
Complete Chain ◽  
A Chain ◽  
Realistic Potentials

We present a numerical simulation of the operation of a chain of 3 Quantum Cellular Automanton (QCA) cells, with the inclusion of a realistic procedure to enforce, with an externally applied bias voltage unbalance, the polarization of the first cell. The polarization state is shown to propagate correctly, as long as the bias unbalance applied to the electrodes of the first cell is not so large as to directly perturb nearby cells. The addition of dummy cells is needed to balance the asymmetries existing at the ends of a chain: this is an indication of further difficulties, that may become relevant if fabrication of more complex arrays is attempted.

Illumination Dependent Admittance Characteristics of Au∕Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)∕n-Si Schottky Barrier Diodes (SBDs)

2011 ◽  
Author(s):  
İ. Taşçıoğlu ◽  
U. Aydemir ◽  
Ş. Altındal ◽  
T. Tunç ◽  
Muhammed Hasan Aslan ◽  
...  
Keyword(s):  
Polyvinyl Alcohol ◽  
Schottky Barrier ◽  
Zinc Acetate ◽  
Schottky Barrier Diodes

Effects of applied bias voltage on the properties of a-C:H films

1996 ◽  
Vol 78 (1-3) ◽  
pp. 31-36 ◽  
Author(s):  
Yin Dachuan ◽  
Xu Niankan ◽  
Liu Zhengtang ◽  
Han Yong ◽  
Zheng Xiulin
Keyword(s):  
Bias Voltage ◽  
Applied Bias ◽  
Applied Bias Voltage
Sign in / Sign up

Export Citation Format

Share Document