scholarly journals Enhancing the efficiency of GaN-based laser diodes by the designing of p-AlGaN cladding layer and upper waveguide layer

2021 ◽  
Author(s):  
Yufei Hou ◽  
De Zhao ◽  
Feng liang ◽  
Zong Liu ◽  
Jing Yang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Cladding Layer

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

2020 ◽  
Vol 13 (7) ◽  
pp. 071008
Author(s):  
Tomoya Omori ◽  
Sayaka Ishizuka ◽  
Shunya Tanaka ◽  
Shinji Yasue ◽  
Kosuke Sato ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Ultraviolet B ◽  
Cladding Layer ◽  
Internal Loss ◽  
P Type

Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

2012 ◽  
Vol 112 (11) ◽  
pp. 113105 ◽  
Author(s):  
P. Chen ◽  
M. X. Feng ◽  
D. S. Jiang ◽  
D. G. Zhao ◽  
Z. S. Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer

Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

2013 ◽  
Vol 19 (4) ◽  
pp. 1500705-1500705 ◽  
Author(s):  
Mei-Xin Feng ◽  
Jian-Ping Liu ◽  
Shu-Ming Zhang ◽  
De-Sheng Jiang ◽  
Zeng-Cheng Li ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Waveguide Layer ◽  
Design Considerations

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

2016 ◽  
Vol 108 (15) ◽  
pp. 151108 ◽  
Author(s):  
M. Martens ◽  
C. Kuhn ◽  
E. Ziffer ◽  
T. Simoneit ◽  
V. Kueller ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Current Injection ◽  
Absorption Loss ◽  
Ultraviolet Laser ◽  
Cladding Layer ◽  
Deep Ultraviolet

Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

2018 ◽  
Vol 39 (8) ◽  
pp. 084004 ◽  
Author(s):  
Meixin Feng ◽  
Qian Sun ◽  
Jianping Liu ◽  
Zengcheng Li ◽  
Yu Zhou ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Diodes ◽  
Beam Pattern ◽  
Blue Laser ◽  
Far Field ◽  
Low Aspect Ratio ◽  
Cladding Layer

AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy

1992 ◽  
Vol 28 (18) ◽  
pp. 1735 ◽  
Author(s):  
A. Takamori ◽  
K. Idota ◽  
K. Uchiyama ◽  
T. Suzuki ◽  
R. Kikuchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Cladding Layer ◽  
Gas Source ◽  
Visible Laser

Optical-Mode Study of Galium Nitrate Based Laser Diodes

2012 ◽  
Vol 571 ◽  
pp. 476-481
Author(s):  
Douglas Alan Cattarusa ◽  
Xiao Min Jin ◽  
Xing Xing Fu ◽  
Xiang Ning Kang ◽  
Bei Zhang ◽  
...  
Keyword(s):  
Lower Order ◽  
Light Emission ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Waveguide Layer ◽  
Mode Analysis ◽  
Ingan Layer ◽  
Optical Confinement ◽  
Optical Mode ◽  
First Order

This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the mode analysis, we compare the optical confinement factor (OCF) percentage of the emitting light from the LDs. There are two structures which we analyze: a basic GaN waveguide structure and an InGaN waveguide structure. The second structure has additional InGaN waveguides and is analyzed under two additional design variations: the concentration of Indium and the thickness of the top waveguide layer. The results of this study indicate introducing InGaN waveguide layers correlates with lower order modes (zero and first order) and increase the OCF values. The top InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. However, the increased thickness of the InGaN layer causes the lower modes’ OFC to decrease. Over all, in the best case, InGaN LD has an OCF of 1.8896%, which is about a 312% improvement compared to that of GaN LD ( OCF=0.4535%).

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