AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy

1992 ◽  
Vol 28 (18) ◽  
pp. 1735 ◽  
Author(s):  
A. Takamori ◽  
K. Idota ◽  
K. Uchiyama ◽  
T. Suzuki ◽  
R. Kikuchi ◽  
...  
1997 ◽  
Vol 19 (4) ◽  
pp. 239-246
Author(s):  
K. K. Wu

Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-index separate- confinement heterostructure (GRIN-SCH) stained quantum well structure are characterized. Measurements of photoluminescence (PL) intensity, L-I curves and wavelength spectra of these two structures all exhibit lasing properties. At room temperature, it is found that induced lasing phenomena has a full width half maximum (FWHM) of 2.1 nm and 0.5 nm, respectively. The emitting wavelengths range from 6500 Å to 6850 Å.


1994 ◽  
Vol 33 (Part 2, No. 1A) ◽  
pp. L13-L14 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Ken-ichi Ohtsuka ◽  
Muneyoshi Suita ◽  
Toshiro Isu ◽  
...  

1996 ◽  
Vol 159 (1-4) ◽  
pp. 1167 ◽  
Author(s):  
M. Imaizumi ◽  
Y. Endoh ◽  
M. Suita ◽  
K. Ohtsuka ◽  
T. Isu ◽  
...  

1993 ◽  
Vol 127 (1-4) ◽  
pp. 5-8 ◽  
Author(s):  
D. Bonnevie ◽  
F. Poingt ◽  
L. Le Gouézigou ◽  
A. Guichardon ◽  
A. Accard ◽  
...  

2005 ◽  
Author(s):  
K. Takahashi ◽  
T. Hayakawa ◽  
T. Suyama ◽  
M. Kondo ◽  
M. Hosoda ◽  
...  

1996 ◽  
Vol 169 (2) ◽  
pp. 293-298 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Muneyoshi Suita ◽  
Hiroshi Sugimoto ◽  
Ken-ichi Ohtsuka ◽  
...  

1990 ◽  
Vol 18 (8) ◽  
pp. 588-591
Author(s):  
Kosei TAKAHASHI ◽  
Masahiro HOSODA ◽  
Atsuo TSUNODA ◽  
Sadayosi MATSUI ◽  
Toshiki HIJIKATA

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