Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer

2012 ◽  
Vol 112 (11) ◽  
pp. 113105 ◽  
Author(s):  
P. Chen ◽  
M. X. Feng ◽  
D. S. Jiang ◽  
D. G. Zhao ◽  
Z. S. Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer

Design Considerations for GaN-Based Blue Laser Diodes With InGaN Upper Waveguide Layer

2013 ◽  
Vol 19 (4) ◽  
pp. 1500705-1500705 ◽  
Author(s):  
Mei-Xin Feng ◽  
Jian-Ping Liu ◽  
Shu-Ming Zhang ◽  
De-Sheng Jiang ◽  
Zeng-Cheng Li ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Blue Laser ◽  
Waveguide Layer ◽  
Design Considerations

Optical-Mode Study of Galium Nitrate Based Laser Diodes

2012 ◽  
Vol 571 ◽  
pp. 476-481
Author(s):  
Douglas Alan Cattarusa ◽  
Xiao Min Jin ◽  
Xing Xing Fu ◽  
Xiang Ning Kang ◽  
Bei Zhang ◽  
...  
Keyword(s):  
Lower Order ◽  
Light Emission ◽  
Laser Diodes ◽  
Waveguide Structure ◽  
Waveguide Layer ◽  
Mode Analysis ◽  
Ingan Layer ◽  
Optical Confinement ◽  
Optical Mode ◽  
First Order

This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the mode analysis, we compare the optical confinement factor (OCF) percentage of the emitting light from the LDs. There are two structures which we analyze: a basic GaN waveguide structure and an InGaN waveguide structure. The second structure has additional InGaN waveguides and is analyzed under two additional design variations: the concentration of Indium and the thickness of the top waveguide layer. The results of this study indicate introducing InGaN waveguide layers correlates with lower order modes (zero and first order) and increase the OCF values. The top InGaN waveguide layer, which has a higher concentration of Indium, appears to increase the OCF. However, the increased thickness of the InGaN layer causes the lower modes’ OFC to decrease. Over all, in the best case, InGaN LD has an OCF of 1.8896%, which is about a 312% improvement compared to that of GaN LD ( OCF=0.4535%).

scholarly journals Stepped upper waveguide layer for higher hole injection efficiency in GaN-based laser diodes

2021 ◽  
Vol 29 (21) ◽  
pp. 33992
Author(s):  
Yufei Hou ◽  
Degang Zhao ◽  
Ping Chen ◽  
Feng Liang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Hole Injection ◽  
Injection Efficiency

The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes

2021 ◽  
Vol 570 ◽  
pp. 151132
Author(s):  
Xiao-Wei Wang ◽  
Feng Liang ◽  
De-Gang Zhao ◽  
Ping Chen ◽  
Zong-Shun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Material Quality

Suppression of electron leakage in 808 nm laser diodes with asymmetric waveguide layer

2016 ◽  
Vol 37 (1) ◽  
pp. 014007 ◽  
Author(s):  
Xiang Li ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Ping Chen ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Electron Leakage

Different influence of InGaN lower waveguide layer on the performance of GaN-based violet and ultraviolet laser diodes

2019 ◽  
Vol 133 ◽  
pp. 106208
Author(s):  
Yuhao Ben ◽  
Feng Liang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Waveguide Layer ◽  
Ultraviolet Laser
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