642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

1998 ◽  
Vol 10 (5) ◽  
pp. 651-653 ◽  
Author(s):  
S.J. Chang ◽  
C.S. Chang
Keyword(s):  
Tensile Strain ◽  
Laser Diodes ◽  
Cladding Layer

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

2020 ◽  
Vol 13 (7) ◽  
pp. 071008
Author(s):  
Tomoya Omori ◽  
Sayaka Ishizuka ◽  
Shunya Tanaka ◽  
Shinji Yasue ◽  
Kosuke Sato ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Ultraviolet B ◽  
Cladding Layer ◽  
Internal Loss ◽  
P Type

Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

2016 ◽  
Vol 108 (15) ◽  
pp. 151108 ◽  
Author(s):  
M. Martens ◽  
C. Kuhn ◽  
E. Ziffer ◽  
T. Simoneit ◽  
V. Kueller ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Current Injection ◽  
Absorption Loss ◽  
Ultraviolet Laser ◽  
Cladding Layer ◽  
Deep Ultraviolet

AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer

1997 ◽  
Vol 9 (9) ◽  
pp. 1199-1201 ◽  
Author(s):  
S.J. Chang ◽  
C.S. Chang ◽  
Y.K. Su ◽  
P.T. Chang ◽  
Y.R. Wu ◽  
...  
Keyword(s):  
Tensile Strain ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Light Emitting ◽  
Cladding Layer

Al-free cladding-layer blue laser diodes with a low aspect ratio in far-field beam pattern

2018 ◽  
Vol 39 (8) ◽  
pp. 084004 ◽  
Author(s):  
Meixin Feng ◽  
Qian Sun ◽  
Jianping Liu ◽  
Zengcheng Li ◽  
Yu Zhou ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Laser Diodes ◽  
Beam Pattern ◽  
Blue Laser ◽  
Far Field ◽  
Low Aspect Ratio ◽  
Cladding Layer

AlGaInP visible laser diodes with heavily Be-doped cladding layer grown by gas source molecular beam epitaxy

1992 ◽  
Vol 28 (18) ◽  
pp. 1735 ◽  
Author(s):  
A. Takamori ◽  
K. Idota ◽  
K. Uchiyama ◽  
T. Suzuki ◽  
R. Kikuchi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
Cladding Layer ◽  
Gas Source ◽  
Visible Laser
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