scholarly journals Challenges of CW laser-induced crystallization in a chalcogenide glass

2013 ◽  
Vol 3 (8) ◽  
pp. 1026 ◽  
Author(s):  
Dmytro Savytskii ◽  
Brian Knorr ◽  
Volkmar Dierolf ◽  
Himanshu Jain
1993 ◽  
Vol 321 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

AbstractIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


1983 ◽  
Vol 23 ◽  
Author(s):  
J.M. Hode ◽  
J.P. Joly ◽  
P. Jeuch

ABSTRACTWe present an overview of the thermal modeling of CW laser induced crystallization of SOI. The dynamical case for a three-layer structure is derived. Effects of the phase change (increase in reflectivity, latent heat) are also treated. Analytical expressions are given and the models are compared to experiment.


1991 ◽  
Vol 69 (6) ◽  
pp. 3696-3701 ◽  
Author(s):  
H. S. Mavi ◽  
K. P. Jain ◽  
A. K. Shukla ◽  
S. C. Abbi ◽  
R. Beserman

1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

ABSTRACTIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


2015 ◽  
Vol 42 (7) ◽  
pp. 0706005
Author(s):  
吴丽华 Wu Lihua ◽  
戴世勋 Dai Shixun ◽  
张培晴 Zhang Peiqing ◽  
刘自军 Liu Zijun ◽  
王训四 Wang Xunsi ◽  
...  
Keyword(s):  

2012 ◽  
Vol 258 (23) ◽  
pp. 9359-9365 ◽  
Author(s):  
Z. Said-Bacar ◽  
P. Prathap ◽  
C. Cayron ◽  
F. Mermet ◽  
Y. Leroy ◽  
...  

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.


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