Kinetics of CW laser-induced crystallization and oxidation of thin, Sb, Se, and Sb2Se3 films in air

1991 ◽  
Vol 52 (3) ◽  
pp. 192-196 ◽  
Author(s):  
K. Kolev ◽  
M. Wautelet
Keyword(s):  
Cw Laser ◽  
Kinetics Of ◽  
Induced Crystallization

scholarly journals Induced Crystallization In CW Laser-Irradiated Sol-Gel Deposited Titania Films

1993 ◽  
Vol 321 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess
Keyword(s):  
Laser Fluence ◽  
Sol Gel ◽  
Film Stress ◽  
Amorphous Films ◽  
Time Resolved ◽  
Cw Laser ◽  
Residual Film ◽  
Titania Films ◽  
Induced Crystallization ◽  
Nanograin Size

AbstractIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.

CW Laser Crystallization of Soi Thermal analysis of the most critical parameters

1983 ◽  
Vol 23 ◽  
Author(s):  
J.M. Hode ◽  
J.P. Joly ◽  
P. Jeuch
Keyword(s):  
Thermal Analysis ◽  
Phase Change ◽  
Latent Heat ◽  
Layer Structure ◽  
Thermal Modeling ◽  
Critical Parameters ◽  
Laser Crystallization ◽  
Cw Laser ◽  
Analytical Expressions ◽  
Induced Crystallization

ABSTRACTWe present an overview of the thermal modeling of CW laser induced crystallization of SOI. The dynamical case for a three-layer structure is derived. Effects of the phase change (increase in reflectivity, latent heat) are also treated. Analytical expressions are given and the models are compared to experiment.

Raman study of cw laser‐induced crystallization ofa‐Si:H films on quartz and sapphire substrates

1991 ◽  
Vol 69 (6) ◽  
pp. 3696-3701 ◽  
Author(s):  
H. S. Mavi ◽  
K. P. Jain ◽  
A. K. Shukla ◽  
S. C. Abbi ◽  
R. Beserman
Keyword(s):  
Sapphire Substrates ◽  
Cw Laser ◽  
Raman Study ◽  
Induced Crystallization

Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors

1996 ◽  
Vol 438 ◽  
Author(s):  
E. Glaser ◽  
T. Fehlhaber ◽  
R. Schulz ◽  
T. Bachmann ◽  
P. Gaiduk
Keyword(s):  
Ion Beam ◽  
High Growth ◽  
Orientation Dependence ◽  
Critical Temperatures ◽  
Epitaxial Regrowth ◽  
Limited Temperature ◽  
Temperature Ranges ◽  
Compound Materials ◽  
Kinetics Of ◽  
Induced Crystallization

AbstractA review of MeV-ion beam induced crystallization (IBIEC) and interfacial amorphization (IBIIA) in III-V compounds (GaAs, InAs, GaP, InP) is given. The kinetics of IBIEC and IBIIA is studied as a function of the temperature, the density of the displacements v, and the ion dose rate j. Reversal temperatures TR for IBIEC ↔ IBIIA transitions are determined for the different materials showing characteristic dependences on v and j. The IBIEC rate is shown to be controlled by point defect diffusion towards the a/c-interface and additionally modified by the interface structure. The suppression of microtwin and stacking fault formation during IBIEC is explained by the fact that the ion beam modifies the orientation dependence of the crystallization kinetics avoiding the disintegration and (111)-faceting of the (100)-interface. For all the compound materials investigated the IBIEC process is stopped above critical temperatures and doses. The capture of diffasing defects by crystallites growing in the amorphous layers is considered to be responsible for the stopping of the IBIEC interface. Ways are demonstrated to avoid stopping, to achieve complete epitaxial regrowth also of thick layers, and to minimize the generation of stable damage in the crystallized layers. The limited temperature ranges for undisturbed IBIEC and IBIIA in III/V-compounds are explained by low nucleation barriers and high growth rates both of crystallites and of amorphous zones.

scholarly journals STRAIN-INDUCED CRYSTALLIZATION OF NATURAL RUBBER: A REVIEW OF X-RAY DIFFRACTION INVESTIGATIONS

2011 ◽  
Vol 84 (3) ◽  
pp. 425-452 ◽  
Author(s):  
Bertrand Huneau
Keyword(s):  
Natural Rubber ◽  
Mechanical Response ◽  
Strain Curve ◽  
Fatigue Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Induced Crystallization ◽  
Temperature Strain ◽  
Kinetics Of ◽  
Induced Crystallization

Abstract Strain-induced crystallization of natural rubber was discovered in 1925 by the means of x-ray diffraction and has been widely investigated by this technique until today. The studies devoted to the structure of the crystalline phase of natural rubber are first reviewed. This structure is strongly anisotropic and can be related to the exceptionally good strength and fatigue properties of this material. The relationships between strain-induced crystallization of natural rubber and its mechanical response, during static or tension-retraction tests, are also reviewed and discussed; in particular, the hysteresis of the stress-strain curve is mainly explained by strain-induced crystallization. The kinetics of crystallization under both static and cyclic deformation is also discussed, as well as the influence of different factors, depending either on material composition (crosslink density, carbon black fillers) or on external parameters (temperature, strain rate…).

Pressure effects in the kinetics of cw laser induced reactions

1983 ◽  
Vol 30 (1) ◽  
pp. 19-21 ◽  
Author(s):  
R. N. Zitter ◽  
D. F. Koster ◽  
A. Ringwelski ◽  
A. Cantoni
Keyword(s):  
Pressure Effects ◽  
Cw Laser ◽  
Kinetics Of

scholarly journals Induced Crystallization in CW Laser-Irradiated Sol-Gel Deposited Titania Films

1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess
Keyword(s):  
Laser Fluence ◽  
Sol Gel ◽  
Film Stress ◽  
Amorphous Films ◽  
Time Resolved ◽  
Cw Laser ◽  
Residual Film ◽  
Titania Films ◽  
Induced Crystallization ◽  
Nanograin Size

ABSTRACTIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.

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