Raman study of cw laser‐induced crystallization ofa‐Si:H films on quartz and sapphire substrates

1991 ◽  
Vol 69 (6) ◽  
pp. 3696-3701 ◽  
Author(s):  
H. S. Mavi ◽  
K. P. Jain ◽  
A. K. Shukla ◽  
S. C. Abbi ◽  
R. Beserman
1993 ◽  
Vol 321 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

AbstractIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


1989 ◽  
Vol 66 (11) ◽  
pp. 5322-5326 ◽  
Author(s):  
H. S. Mavi ◽  
A. K. Shukla ◽  
S. C. Abbi ◽  
K. P. Jain

1983 ◽  
Vol 23 ◽  
Author(s):  
J.M. Hode ◽  
J.P. Joly ◽  
P. Jeuch

ABSTRACTWe present an overview of the thermal modeling of CW laser induced crystallization of SOI. The dynamical case for a three-layer structure is derived. Effects of the phase change (increase in reflectivity, latent heat) are also treated. Analytical expressions are given and the models are compared to experiment.


1993 ◽  
Vol 316 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess

ABSTRACTIsothermal annealing of amorphous TiO2 films deposited from acidic sol-gel precursor solutions results in film densification and concomitant increase in refractive index. Subsequent heating above 300°C leads to irreversible transformation to an anatase crystalline phase. Similar phenomena occur when such amorphous films are subjected to focused cw laser irradiation. Controlled variations in laser fluence are used to density or crystallize selected regions of the film. Low fluence conditioning leads to the evolution of a subtle nanograin-size morphology, evident in AFM images, which appears to retard subsequent film crystallization when such regions are subjected to higher laser fluence. Time-resolved Raman spectroscopy has been used to characterize irradiated regions in order to follow the crystallization kinetics, assess phase homogeneity, and evaluate accompanying changes in residual film stress.


2013 ◽  
Vol 3 (8) ◽  
pp. 1026 ◽  
Author(s):  
Dmytro Savytskii ◽  
Brian Knorr ◽  
Volkmar Dierolf ◽  
Himanshu Jain

1991 ◽  
Vol 69 (11) ◽  
pp. 7815-7819 ◽  
Author(s):  
H. S. Mavi ◽  
A. K. Shukla ◽  
K. P. Jain ◽  
S. C. Abbi ◽  
R. Beserman
Keyword(s):  
Cw Laser ◽  

2011 ◽  
Vol 33 (3) ◽  
pp. 480-484 ◽  
Author(s):  
M.A. Camacho-López ◽  
L. Escobar-Alarcón ◽  
M. Picquart ◽  
R. Arroyo ◽  
G. Córdoba ◽  
...  

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