Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors

2003 ◽  
Vol 28 (13) ◽  
pp. 1150 ◽  
Author(s):  
S. Lardenois ◽  
D. Pascal ◽  
L. Vivien ◽  
E. Cassan ◽  
S. Laval ◽  
...  
1991 ◽  
Vol 244 ◽  
Author(s):  
J. Schmidtchen ◽  
B. Schüppert ◽  
A. Splett ◽  
K. Petermann

ABSTRACTThe realization of single-mode rib-waveguides with dimensions of several micrometers in Silicon-On-Insulator (SOI) is reported. The predicted monomode behaviour is confirmed by comparison of a simulated and a measured nearfield intensity distribution. Waveguide losses below 0.5dB/cm were obtained at wavelengths of 1.3μm and 1.55μm, respectively, independent of the polarization state.


2018 ◽  
Author(s):  
Cyril Bellegarde ◽  
Erwine Pargon ◽  
Corrado Sciancalepore ◽  
Camille Petit-Etienne ◽  
Jean-Michel Hartmann ◽  
...  

2018 ◽  
Vol 32 (31) ◽  
pp. 1850344 ◽  
Author(s):  
N. Eti ◽  
Z. Çetin ◽  
H. S. Sözüer

A detailed numerical study of low-loss silicon on insulator (SOI) waveguide bend is presented using the fully three-dimensional (3D) finite-difference time-domain (FDTD) method. The geometrical parameters are optimized to minimize the bending loss over a range of frequencies. Transmission results for the conventional single bend and photonic crystal assisted SOI waveguide bend are compared. Calculations are performed for the transmission values of TE-like modes where the electric field is strongly transverse to the direction of propagation. The best obtained transmission is over 95% for TE-like modes.


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