Optimization of H2 thermal annealing process for the fabrication of ultra-low loss sub-micron silicon-on-insulator rib waveguides

2018 ◽  
Author(s):  
Cyril Bellegarde ◽  
Erwine Pargon ◽  
Corrado Sciancalepore ◽  
Camille Petit-Etienne ◽  
Jean-Michel Hartmann ◽  
...  
1996 ◽  
Vol 424 ◽  
Author(s):  
S. S. He ◽  
V. L. Shannon ◽  
T. Nguyen

AbstractPECVD silicon nitride was deposited by silane and deuterium ammonia. Silicon rich and nitrogen rich silicon nitride were deposited by varying the ratio of the SiH4/DH3. From FTIR, we found that the wave numbers of SiD and ND shifted lower when compared to SiH and NH bond in the NH3 nitride. In Si-rich nitride, both Si-H and Si-D bonds were found, which is different from N-rich nitride, where only an ND bond was found. Most of the hydrogen in NH(D) comes from the ammonia during PECVD deposition. We found that some of the deuterium exchanges its bonding to silicon from the initial bonding to nitrogen during a rapid thermal annealing process.


Author(s):  
G M Alonzo-Medina ◽  
A González-González ◽  
J L Sacedón ◽  
A I Oliva

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