High-efficiency silicon optoelectronic modulator based on a Bragg mirror and integrated in a low-loss silicon-on-insulator waveguide

1999 ◽  
Author(s):  
Andrea Irace ◽  
Giuseppe Coppola ◽  
Mario Iodice ◽  
Antonello Cutolo
Keyword(s):  
High Efficiency ◽  
Silicon On Insulator ◽  
Low Loss ◽  
Bragg Mirror

Low-Loss Paper Substrate for Printed High Efficiency Antennas at 2.45 GHz

2015 ◽  
Vol 14 ◽  
pp. 1400-1403 ◽  
Author(s):  
I. Kharrat ◽  
P. Xavier ◽  
T.-P. Vuong ◽  
J.-M. Duchamp ◽  
Ph. Benech ◽  
...  
Keyword(s):  
High Efficiency ◽  
Low Loss ◽  
Paper Substrate

scholarly journals Fully three-dimensional analysis of a photonic crystal assisted silicon on insulator waveguide bend

2018 ◽  
Vol 32 (31) ◽  
pp. 1850344 ◽  
Author(s):  
N. Eti ◽  
Z. Çetin ◽  
H. S. Sözüer
Keyword(s):  
Photonic Crystal ◽  
Numerical Study ◽  
Fdtd Method ◽  
Three Dimensional ◽  
Silicon On Insulator ◽  
Geometrical Parameters ◽  
Low Loss ◽  
Bending Loss ◽  
Difference Time ◽  
Waveguide Bend

A detailed numerical study of low-loss silicon on insulator (SOI) waveguide bend is presented using the fully three-dimensional (3D) finite-difference time-domain (FDTD) method. The geometrical parameters are optimized to minimize the bending loss over a range of frequencies. Transmission results for the conventional single bend and photonic crystal assisted SOI waveguide bend are compared. Calculations are performed for the transmission values of TE-like modes where the electric field is strongly transverse to the direction of propagation. The best obtained transmission is over 95% for TE-like modes.

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

Experimental demonstration of a low-loss optical H-tree distributionusing silicon-on-insulator microwaveguides

2004 ◽  
Vol 85 (5) ◽  
pp. 701-703 ◽  
Author(s):  
L. Vivien ◽  
S. Lardenois ◽  
D. Pascal ◽  
S. Laval ◽  
E. Cassan ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Experimental Demonstration ◽  
Low Loss

Low-loss silicon-on-insulator shallow-ridge TE and TM waveguides formed using thermal oxidation

2009 ◽  
Vol 48 (5) ◽  
pp. 958 ◽  
Author(s):  
R. Pafchek ◽  
R. Tummidi ◽  
J. Li ◽  
M. A. Webster ◽  
E. Chen ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Silicon On Insulator ◽  
Low Loss
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