scholarly journals Wave optical simulation of the light trapping properties of black silicon surface textures

2016 ◽  
Vol 24 (6) ◽  
pp. A434 ◽  
Author(s):  
Alexander Jürgen Bett ◽  
Johannes Eisenlohr ◽  
Oliver Höhn ◽  
Päivikki Repo ◽  
Hele Savin ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Light Trapping ◽  
Optical Simulation ◽  
Black Silicon ◽  
Surface Textures

Design of Black Silicon with Ultra-Light-Trapping Structure

2011 ◽  
Vol 31 (10) ◽  
pp. 1005007 ◽  
Author(s):  
钱超峰 Qian Chaofeng ◽  
王庆康 Wang Qingkang ◽  
李海华 Li Haihua
Keyword(s):  
Light Trapping ◽  
Black Silicon

A normal-incidence PtSi photoemissive detector with black silicon light-trapping

2013 ◽  
Vol 114 (18) ◽  
pp. 183102 ◽  
Author(s):  
Martin Steglich ◽  
Matthias Zilk ◽  
Astrid Bingel ◽  
Christian Patzig ◽  
Thomas Käsebier ◽  
...  
Keyword(s):  
Light Trapping ◽  
Normal Incidence ◽  
Black Silicon

scholarly journals On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas

Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2214
Author(s):  
Bishal Kafle ◽  
Ahmed Ridoy ◽  
Eleni Miethig ◽  
Laurent Clochard ◽  
Edward Duffy ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Elevated Temperatures ◽  
Crystalline Silicon ◽  
High Volume ◽  
Black Silicon ◽  
Gas Mixture ◽  
Process Duration ◽  
Surface Reflection ◽  
Statistical Variation ◽  
Silicon Photovoltaics

In this paper, we study the plasma-less etching of crystalline silicon (c-Si) by F2/N2 gas mixture at moderately elevated temperatures. The etching is performed in an inline etching tool, which is specifically developed to lower costs for products needing a high volume manufacturing etching platform such as silicon photovoltaics. Specifically, the current study focuses on developing an effective front-side texturing process on Si(100) wafers. Statistical variation of the tool parameters is performed to achieve high etching rates and low surface reflection of the textured silicon surface. It is observed that the rate and anisotropy of the etching process are strongly defined by the interaction effects between process parameters such as substrate temperature, F2 concentration, and process duration. The etching forms features of sub-micron dimensions on c-Si surface. By maintaining the anisotropic nature of etching, weighted surface reflection (Rw) as low as Rw < 2% in Si(100) is achievable. The lowering of Rw is mainly due to the formation of deep, density grade nanostructures, so-called black silicon, with lateral dimensions that are smaller to the major wavelength ranges of interest in silicon photovoltaics.

Random versus periodic: Determining light trapping of randomly textured thin film solar cells by the superposition of periodic surface textures

2015 ◽  
Vol 143 ◽  
pp. 183-189 ◽  
Author(s):  
Rahul Dewan ◽  
Shailesh Shrestha ◽  
Vladislav Jovanov ◽  
Jürgen Hüpkes ◽  
Karsten Bittkau ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Light Trapping ◽  
Thin Film Solar Cells ◽  
Periodic Surface ◽  
Surface Textures

scholarly journals Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping

2014 ◽  
Vol 25 (30) ◽  
pp. 305301 ◽  
Author(s):  
Zhida Xu ◽  
Yuan Yao ◽  
Eric P Brueckner ◽  
Lanfang Li ◽  
Jing Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Trapping ◽  
Black Silicon
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