A normal-incidence PtSi photoemissive detector with black silicon light-trapping

2013 ◽  
Vol 114 (18) ◽  
pp. 183102 ◽  
Author(s):  
Martin Steglich ◽  
Matthias Zilk ◽  
Astrid Bingel ◽  
Christian Patzig ◽  
Thomas Käsebier ◽  
...  
Keyword(s):  
Light Trapping ◽  
Normal Incidence ◽  
Black Silicon

Polarization-Insensitive Dielectric Metamaterials Absorber for Near-Unity UV-Light Trapping in Monolayer Graphene

2020 ◽  
Author(s):  
Yinong Xie ◽  
Xueying Liu ◽  
Yijun Cai ◽  
Jinfeng Zhu
Keyword(s):  
Magnetic Resonance ◽  
High Performance ◽  
Uv Light ◽  
Light Trapping ◽  
Normal Incidence ◽  
Resonant Absorption ◽  
Base Layer ◽  
Absorption Enhancement ◽  
Monolayer Graphene ◽  
Polarization Insensitive

Abstract With the aim of improving UV light trapping capability in monolayer graphene, a metamaterials absorber is proposed, which exhibits the polarization-insensitive feature due to the geometrical symmetry. Through the functional combination of magnetic resonance and UV mirror, the absorption of unpolarized UV light in monolayer graphene can reach 99.5% under normal incidence. The absorption enhancement is induced by the magnetic resonance mode between the dielectric silica nanomesh and the calcium fluoride base layer. The effects of geometric parameters on the absorption spectra are systematically investigated. By optimizing the metamaterials design, two distinct resonant absorption peaks can be excited simultaneously for monolayer graphene. Our work paves the way for applications on high-performance UV metamaterials devices by using two-dimensional materials.

Design of Black Silicon with Ultra-Light-Trapping Structure

2011 ◽  
Vol 31 (10) ◽  
pp. 1005007 ◽  
Author(s):  
钱超峰 Qian Chaofeng ◽  
王庆康 Wang Qingkang ◽  
李海华 Li Haihua
Keyword(s):  
Light Trapping ◽  
Black Silicon

scholarly journals Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping

2014 ◽  
Vol 25 (30) ◽  
pp. 305301 ◽  
Author(s):  
Zhida Xu ◽  
Yuan Yao ◽  
Eric P Brueckner ◽  
Lanfang Li ◽  
Jing Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Trapping ◽  
Black Silicon

Geometric Light Trapping in 2D and 3D Structured Small Molecule Organic Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 317-322 ◽  
Author(s):  
Marcos Soldera ◽  
Emiliano Estrada ◽  
Kurt Taretto
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Collection Efficiency ◽  
Low Cost ◽  
Light Trapping ◽  
Normal Incidence ◽  
Potential Effect ◽  
Textured Surfaces ◽  
Conversion Efficiencies ◽  
2D And 3D

ABSTRACTDespite organic solar cells have recently shown remarkable high power conversion efficiencies approaching 10%, further improvements are required to provide a low-cost alternative to inorganic photovoltaics. Optical losses related to insufficient light trapping and parasitic absorption of the contact layers limit drastically the photocurrent delivered by the cells. Textured surfaces, such as V-grooves (2D) and pyramids (3D), can provide better light coupling into the conformally deposited solar cells. In this work, we analyze the enhancement in light absorption in textured solar cells based on copper phtalocyanine (CuPc) and fullerene (C60) on the micro- and submicroscale. The analysis is carried out with the aid of the finite element method in 2D and 3D, taking into account interference as well as reflection and refraction of the incident AM1.5G spectrum. The results show that both type of structured cells perform better than planar cells reaching up to 23% improvement in maximum photocurrent for normal incidence. We also explore the lateral inhomogeneities of the generation rate within the active layers and their potential effect on the exciton collection efficiency.

Improved hydrogen evolution with SnS2 quantum dots incorporated black Si photocathode

2021 ◽  
Author(s):  
Bo Wang ◽  
Ming Chen ◽  
Jun Lv ◽  
Guangqing Xu ◽  
Xia Shu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Specific Surface ◽  
Surface Area ◽  
Hydrogen Evolution ◽  
Specific Surface Area ◽  
Light Trapping ◽  
Black Silicon ◽  
Large Specific Surface Area

Black silicon (bSi), owning appealing light-trapping properties and large specific surface area, ranks many other photocathode materials. However, the insufficient dynamics towards HER seriously bother black Si. Herein, a novel...

Broadband Absorptance High Efficiency Silicon Nanowire Fractal Arrays for Photovoltaic Applications

2014 ◽  
Vol 1707 ◽  
Author(s):  
Omar H. Alzoubi ◽  
Husam Abu-Safe ◽  
Khalid Alshurman ◽  
Hameed A. Naseem
Keyword(s):  
High Efficiency ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Normal Incidence ◽  
Hexagonal Array ◽  
Equivalent Thickness ◽  
Array Structure ◽  
Photovoltaic Solar Cells

ABSTRACTNanowire arrays have been proposed to enhance light trapping, increase efficiencies, and reduced material cost in photovoltaic solar cells. In this work we present a new crystalline silicon nanowire array structure, inspired by fractal geometry. The array structure is assumed to be an infinite 2D array in the x and y directions, and composed of vertically aligned SiNW suspended in air. Hexagonal fractal-like geometry is adapted in arranging cylindrical SiNW in these arrays. Full-wave finite element method 3D simulation is used to compute reflectance, transmittance and absorptance of the array for a normal incidence plane wave. The proposed fractal-like distribution of SiNW arrays yield broad absorption spectrum and enhanced efficiency while using less material. The efficiency of the proposed fractal-like SiNW arrays achieve ∼100% enhancement over that of the equivalent thickness flat c-Si film, and ∼18% enhancement over an equivalent height hexagonal array. The proposed optimized structures achieved a filling ratio ∼25%, which is ∼33% less than the corresponding hexagonal array.

scholarly journals Wave optical simulation of the light trapping properties of black silicon surface textures

2016 ◽  
Vol 24 (6) ◽  
pp. A434 ◽  
Author(s):  
Alexander Jürgen Bett ◽  
Johannes Eisenlohr ◽  
Oliver Höhn ◽  
Päivikki Repo ◽  
Hele Savin ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Light Trapping ◽  
Optical Simulation ◽  
Black Silicon ◽  
Surface Textures

Improvement of Ge-on-Si photodiodes by black silicon light trapping

2013 ◽  
Vol 102 (11) ◽  
pp. 111110 ◽  
Author(s):  
Martin Steglich ◽  
Matthias Zilk ◽  
Frank Schrempel ◽  
Andreas Tünnermann ◽  
Ernst-Bernhard Kley
Keyword(s):  
Light Trapping ◽  
Black Silicon

Ray Tracing of Light Trapping Schemes in Thin Crystalline Silicon for Photovoltaics

2020 ◽  
Vol 301 ◽  
pp. 183-191 ◽  
Author(s):  
Mohd Zamir Pakhuruddin
Keyword(s):  
Ray Tracing ◽  
Light Absorption ◽  
Crystalline Silicon ◽  
Light Trapping ◽  
Solar Spectrum ◽  
Wavelength Region ◽  
Normal Incidence ◽  
Photocurrent Density ◽  
Back Surface ◽  
Reflective Coating

Thin crystalline silicon (c-Si) suffers from poor light absorption which hinders generation of high photocurrent in photovoltaic (PV) devices. To overcome this issue, efficient light trapping (LT) schemes need to be incorporated into the thin c-Si absorber. This paper presents ray tracing of LT schemes in thin c-Si to enhance broadband light absorption within 300-1200 nm wavelength region. For the ray tracing, mono c-Si wafer with 100 μm thickness is investigated and solar spectrum (AM1.5G) at normal incidence is used. Front and rear pyramid textures, silicon nitride (SiNx) anti-reflective coating (ARC) and back surface reflector (BSR) are the LT schemes being studied in this work. With incremental LT schemes, optical properties of the thin c-Si are analyzed. From the absorption curve, maximum potential photocurrent density (Jmax) is calculated, assuming unity carrier collection. The c-Si reference (without LT) exhibits Jmax of 24.93 mA/cm2. With incorporation of incremental LT schemes into the thin c-Si, the Jmax increases, owing to enhanced light coupling and light scattering in the c-Si absorber. The Jmax up to 42.12 mA/cm2 is achieved when all the LT schemes are incorporated into the thin c-Si absorber. This represents 69% enhancement when compared to the Jmax of the c-Si reference.

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