scholarly journals Polarization control in GaN nanowire lasers

2014 ◽  
Vol 22 (16) ◽  
pp. 19198 ◽  
Author(s):  
Huiwen Xu ◽  
Antonio Hurtado ◽  
Jeremy B. Wright ◽  
Changyi Li ◽  
Sheng Liu ◽  
...  
Keyword(s):  
Polarization Control ◽  
Gan Nanowire ◽  
Nanowire Lasers

scholarly journals Intrinsic polarization control in rectangular GaN nanowire lasers

Nanoscale ◽  
2016 ◽  
Vol 8 (10) ◽  
pp. 5682-5687 ◽  
Author(s):  
Changyi Li ◽  
Sheng Liu ◽  
Ting. S. Luk ◽  
Jeffrey J. Figiel ◽  
Igal Brener ◽  
...  
Keyword(s):  
Shape Control ◽  
Intrinsic Polarization ◽  
Cross Sectional ◽  
Polarization Control ◽  
Gan Nanowires ◽  
Linearly Polarized ◽  
Gan Nanowire ◽  
Sectional Shape ◽  
Nanowire Lasers

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control.

scholarly journals Single-mode GaN nanowire lasers

2012 ◽  
Vol 20 (16) ◽  
pp. 17873 ◽  
Author(s):  
Qiming Li ◽  
Jeremy B. Wright ◽  
Weng W. Chow ◽  
Ting Shan Luk ◽  
Igal Brener ◽  
...  
Keyword(s):  
Single Mode ◽  
Gan Nanowire ◽  
Nanowire Lasers

Polarization switching in GaN nanowire lasers

2013 ◽  
Vol 103 (25) ◽  
pp. 251107 ◽  
Author(s):  
A. Hurtado ◽  
H. Xu ◽  
J. B. Wright ◽  
Sheng Liu ◽  
Q. Li ◽  
...  
Keyword(s):  
Polarization Switching ◽  
Gan Nanowire ◽  
Nanowire Lasers

Opto-electronic Simulation of GaN Nanowire Lasers

2005 ◽  
Vol 892 ◽  
Author(s):  
Liang Chen ◽  
Elias Towe
Keyword(s):  
Carrier Transport ◽  
Optical Gain ◽  
Stimulated Emission ◽  
Rate Equations ◽  
Electronic Simulation ◽  
Self Consistent ◽  
Optical Modes ◽  
Gan Nanowire ◽  
Nanowire Lasers ◽  
Lasing Modes

AbstractA self-consistent, coupled opto-electronic simulation for studying GaN nanowire lasers is presented. The model solves, simultaneously and self-consistently, the carrier transport equations and the photon rate equations. The basic physical model takes into account both bulk and surface dark recombinations, stimulated emission, the anisotropic optical gain typical of the Wurtzite GaN structure, the modified spontaneous emission, and its coupling into the lasing modes by microcavity effects. The model further incorporates band gap shrinkage effects due to band renormalization and the effects of multiple lateral and longitudinal lasing and non-lasing optical modes.

GaN Nanowire Lasers

2007 ◽  
pp. 467-491 ◽  
Author(s):  
Alexey V. Maslov ◽  
Cun-zheng Ning
Keyword(s):  
Gan Nanowire ◽  
Nanowire Lasers

GaN nanowire lasers with low lasing thresholds

2005 ◽  
Vol 87 (17) ◽  
pp. 173111 ◽  
Author(s):  
Silvija Gradečak ◽  
Fang Qian ◽  
Yat Li ◽  
Hong-Gyu Park ◽  
Charles M. Lieber
Keyword(s):  
Gan Nanowire ◽  
Nanowire Lasers

scholarly journals Polarization Properties of GaN Nanowire Lasers

CLEO: 2013 ◽  
2013 ◽  
Author(s):  
A. Hurtado ◽  
H. Xu ◽  
J. B. Wright ◽  
Sheng Liu ◽  
Q. Li ◽  
...  
Keyword(s):  
Gan Nanowire ◽  
Nanowire Lasers

scholarly journals Mode and Polarization Control in Gallium Nitride Nanowire Lasers

2014 ◽  
Author(s):  
George T. Wang ◽  
Huiwen Xu ◽  
Jeremy B. Wright ◽  
Antonio Hurtado ◽  
Ting-Shan Luk ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Polarization Control ◽  
Nanowire Lasers

GaOx@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity

2021 ◽  
Vol 13 (35) ◽  
pp. 41916-41925
Author(s):  
Yu-Hang Ji ◽  
Qin Gao ◽  
An-Ping Huang ◽  
Meng-Qi Yang ◽  
Yan-Qi Liu ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Persistent Photoconductivity ◽  
Gan Nanowire ◽  
Flexible Graphite
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