GaN nanowire lasers with low lasing thresholds

2005 ◽  
Vol 87 (17) ◽  
pp. 173111 ◽  
Author(s):  
Silvija Gradečak ◽  
Fang Qian ◽  
Yat Li ◽  
Hong-Gyu Park ◽  
Charles M. Lieber
Keyword(s):  
Nanoscale ◽  
2016 ◽  
Vol 8 (10) ◽  
pp. 5682-5687 ◽  
Author(s):  
Changyi Li ◽  
Sheng Liu ◽  
Ting. S. Luk ◽  
Jeffrey J. Figiel ◽  
Igal Brener ◽  
...  

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control.


2012 ◽  
Vol 20 (16) ◽  
pp. 17873 ◽  
Author(s):  
Qiming Li ◽  
Jeremy B. Wright ◽  
Weng W. Chow ◽  
Ting Shan Luk ◽  
Igal Brener ◽  
...  

2013 ◽  
Vol 103 (25) ◽  
pp. 251107 ◽  
Author(s):  
A. Hurtado ◽  
H. Xu ◽  
J. B. Wright ◽  
Sheng Liu ◽  
Q. Li ◽  
...  

2005 ◽  
Vol 892 ◽  
Author(s):  
Liang Chen ◽  
Elias Towe

AbstractA self-consistent, coupled opto-electronic simulation for studying GaN nanowire lasers is presented. The model solves, simultaneously and self-consistently, the carrier transport equations and the photon rate equations. The basic physical model takes into account both bulk and surface dark recombinations, stimulated emission, the anisotropic optical gain typical of the Wurtzite GaN structure, the modified spontaneous emission, and its coupling into the lasing modes by microcavity effects. The model further incorporates band gap shrinkage effects due to band renormalization and the effects of multiple lateral and longitudinal lasing and non-lasing optical modes.


Author(s):  
Alexey V. Maslov ◽  
Cun-zheng Ning
Keyword(s):  

2014 ◽  
Vol 22 (16) ◽  
pp. 19198 ◽  
Author(s):  
Huiwen Xu ◽  
Antonio Hurtado ◽  
Jeremy B. Wright ◽  
Changyi Li ◽  
Sheng Liu ◽  
...  

Author(s):  
A. Hurtado ◽  
H. Xu ◽  
J. B. Wright ◽  
Sheng Liu ◽  
Q. Li ◽  
...  
Keyword(s):  

2021 ◽  
Vol 13 (35) ◽  
pp. 41916-41925
Author(s):  
Yu-Hang Ji ◽  
Qin Gao ◽  
An-Ping Huang ◽  
Meng-Qi Yang ◽  
Yan-Qi Liu ◽  
...  

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