scholarly journals Single-mode GaN nanowire lasers

2012 ◽  
Vol 20 (16) ◽  
pp. 17873 ◽  
Author(s):  
Qiming Li ◽  
Jeremy B. Wright ◽  
Weng W. Chow ◽  
Ting Shan Luk ◽  
Igal Brener ◽  
...  
Nanoscale ◽  
2016 ◽  
Vol 8 (10) ◽  
pp. 5682-5687 ◽  
Author(s):  
Changyi Li ◽  
Sheng Liu ◽  
Ting. S. Luk ◽  
Jeffrey J. Figiel ◽  
Igal Brener ◽  
...  

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control.


2012 ◽  
Vol 101 (11) ◽  
pp. 113106 ◽  
Author(s):  
Huiwen Xu ◽  
Jeremy B. Wright ◽  
Ting-Shan Luk ◽  
Jeffery J. Figiel ◽  
Karen Cross ◽  
...  
Keyword(s):  

ACS Nano ◽  
2018 ◽  
Vol 12 (3) ◽  
pp. 2373-2380 ◽  
Author(s):  
Mahmoud Behzadirad ◽  
Mohsen Nami ◽  
Neal Wostbrock ◽  
Mohammad Reza Zamani Kouhpanji ◽  
Daniel F. Feezell ◽  
...  

Author(s):  
Jeremy B. Wright ◽  
Qiming Li ◽  
Igal Brener ◽  
Ting S. Luk ◽  
George T. Wang ◽  
...  

2013 ◽  
Vol 103 (25) ◽  
pp. 251107 ◽  
Author(s):  
A. Hurtado ◽  
H. Xu ◽  
J. B. Wright ◽  
Sheng Liu ◽  
Q. Li ◽  
...  

2005 ◽  
Vol 892 ◽  
Author(s):  
Liang Chen ◽  
Elias Towe

AbstractA self-consistent, coupled opto-electronic simulation for studying GaN nanowire lasers is presented. The model solves, simultaneously and self-consistently, the carrier transport equations and the photon rate equations. The basic physical model takes into account both bulk and surface dark recombinations, stimulated emission, the anisotropic optical gain typical of the Wurtzite GaN structure, the modified spontaneous emission, and its coupling into the lasing modes by microcavity effects. The model further incorporates band gap shrinkage effects due to band renormalization and the effects of multiple lateral and longitudinal lasing and non-lasing optical modes.


Author(s):  
Alexey V. Maslov ◽  
Cun-zheng Ning
Keyword(s):  

2021 ◽  
Vol 8 ◽  
Author(s):  
Salman Ullah ◽  
Sijie Pian ◽  
Fang Dai ◽  
Yilun Wang ◽  
Yaoguang Ma ◽  
...  

Semiconductor nanowires are one of the most fascinating topics over the past few decades. As miniaturized coherent light sources, semiconductor nanowires have been attracting tremendous attention in recent years for scientific and technological interest as potential ultra-compact, low cost, high efficiency, and low power consumption. Among different types of lasers, one-dimensional nanowires are of great interest as a promising material for next-generation nanophotonics and nanoelectronics applications due to their unique optical and electrical properties. Semiconductor nanowire lasers with single-mode output are vital in a variety of practical applications ranging from signal processing, spectroscopy, displays, optical sensing, on-chip communications, and biological studies. This article reviews the basic technology and research progress of single-mode semiconductor nanowire lasers. Afterward, the key methods and development of the different types of coupling to achieved single-mode laser output are elaborated. Finally, the challenges faced by each scheme are summarized.


2005 ◽  
Vol 87 (17) ◽  
pp. 173111 ◽  
Author(s):  
Silvija Gradečak ◽  
Fang Qian ◽  
Yat Li ◽  
Hong-Gyu Park ◽  
Charles M. Lieber
Keyword(s):  

2014 ◽  
Vol 22 (16) ◽  
pp. 19198 ◽  
Author(s):  
Huiwen Xu ◽  
Antonio Hurtado ◽  
Jeremy B. Wright ◽  
Changyi Li ◽  
Sheng Liu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document