10Gb/s Silicon Modulator Based on Bulk-Silicon Platform for DRAM Optical Interface

2011 ◽  
Author(s):  
K. -H. Lee ◽  
D.J. Shin ◽  
H. -C. Ji ◽  
K. W. Na ◽  
S. G. Kim ◽  
...  
Keyword(s):  
Bulk Silicon ◽  
Silicon Modulator

scholarly journals Laser-excited elastic guided waves reveal the complex mechanics of nanoporous silicon

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Marc Thelen ◽  
Nicolas Bochud ◽  
Manuel Brinker ◽  
Claire Prada ◽  
Patrick Huber
Keyword(s):  
Guided Waves ◽  
Laser Ultrasonics ◽  
Bulk Silicon ◽  
Nanoporous Silicon ◽  
Stiffness Reduction ◽  
Mechanical Characterisation ◽  
Isotropic Elasticity ◽  
On Chip ◽  
Non Destructive

AbstractNanoporosity in silicon leads to completely new functionalities of this mainstream semiconductor. A difficult to assess mechanics has however significantly limited its application in fields ranging from nanofluidics and biosensorics to drug delivery, energy storage and photonics. Here, we present a study on laser-excited elastic guided waves detected contactless and non-destructively in dry and liquid-infused single-crystalline porous silicon. These experiments reveal that the self-organised formation of 100 billions of parallel nanopores per square centimetre cross section results in a nearly isotropic elasticity perpendicular to the pore axes and an 80% effective stiffness reduction, altogether leading to significant deviations from the cubic anisotropy observed in bulk silicon. Our thorough assessment of the wafer-scale mechanics of nanoporous silicon provides the base for predictive applications in robust on-chip devices and evidences that recent breakthroughs in laser ultrasonics open up entirely new frontiers for in-situ, non-destructive mechanical characterisation of dry and liquid-functionalised porous materials.

scholarly journals Abinitiocalculation of the shock Hugoniot of bulk silicon

2016 ◽  
Vol 93 (9) ◽  
Author(s):  
Oliver Strickson ◽  
Emilio Artacho
Keyword(s):  
Bulk Silicon ◽  
Shock Hugoniot

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

2007 ◽  
Vol 6 (1) ◽  
pp. 118-125 ◽  
Author(s):  
K.E. Moselund ◽  
D. Bouvet ◽  
L. Tschuor ◽  
V. Pott ◽  
P. Dainesi ◽  
...  
Keyword(s):  
Optical Waveguides ◽  
Silicon On Insulator ◽  
Bulk Silicon

scholarly journals Corrigendum to “Synthesis of bulk silicon oxynitride glass through nitridation of SiO 2 aerogels and determination of Tg ”

2021 ◽  
Author(s):  
Yuta Osawa ◽  
Kenichiro Iwasaki ◽  
Takayuki Nakanishi ◽  
Atsuo Yasumori ◽  
Yoshio Matsui ◽  
...  
Keyword(s):  
Silicon Oxynitride ◽  
Bulk Silicon ◽  
Oxynitride Glass

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

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