scholarly journals Temporal-contrast imperfections as drivers for ultrafast laser modifications in bulk silicon

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Andong Wang ◽  
Amlan Das ◽  
David Grojo
2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Margaux Chanal ◽  
Vladimir Yu. Fedorov ◽  
Maxime Chambonneau ◽  
Raphaël Clady ◽  
Stelios Tzortzakis ◽  
...  

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
M. Chambonneau ◽  
M. Blothe ◽  
Q. Li ◽  
V. Yu. Fedorov ◽  
T. Heuermann ◽  
...  
Keyword(s):  

2021 ◽  
Vol 33 (1) ◽  
pp. 012009
Author(s):  
Aiko Narazaki ◽  
Hideyuki Takada ◽  
Dai Yoshitomi ◽  
Kenji Torizuka ◽  
Yohei Kobayashi

2020 ◽  
Vol 13 (6) ◽  
pp. 1-15
Author(s):  
ZHANG Guo-dong ◽  
◽  
CHENG Guang-hua ◽  
ZHANG Wei ◽  
Keyword(s):  

1998 ◽  
Vol 38 (1) ◽  
pp. 55-59 ◽  
Author(s):  
Joseph Bilotta ◽  
Francesca M. Lynd ◽  
Maureen K. Powers

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.


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