Semiconductor Ballistic Electron Reflection, Refraction, Interference, and Diffraction Effects: Modeling and Quantum Device Applications

1992 ◽  
Author(s):  
T. K. Gaylord ◽  
G. N. Henderson ◽  
E. N. Glytsis ◽  
D. W. Wilson ◽  
P. N. First ◽  
...  
Keyword(s):  
Ballistic Electron ◽  
Electron Reflection ◽  
Quantum Device ◽  
Device Applications ◽  
Diffraction Effects

BeTe/Si heterostructures for MIS and quantum device applications

1999 ◽  
Vol 10 (2) ◽  
pp. 187-191 ◽  
Author(s):  
Shan Jiang ◽  
Pedro Barrios ◽  
Robert T Bate ◽  
Wiley P Kirk
Keyword(s):  
Quantum Device ◽  
Device Applications

scholarly journals Crossed Andreev Reflection in Zigzag Phosphorene Nanoribbon Based Ferromagnet/Superconductor/Ferromagnet Junctions

2022 ◽  
Author(s):  
Ruigang Li ◽  
Lei Chen ◽  
Jun-Feng Liu ◽  
Jun Wang
Keyword(s):  
Transport Process ◽  
Andreev Reflection ◽  
Chemical Potential ◽  
Electron Tunneling ◽  
Edge States ◽  
Chemical Potentials ◽  
Electron Reflection ◽  
Quantum Device ◽  
Crossed Andreev Reflection

Abstract We study the crossed Andreev reflection in zigzag phosphorene nanoribbon based ferromagnet/superconductor/ferromagnet junction. Only edge states, which are entirely detached from the bulk gap, involved in the transport process. The perfect crossed Andreev reflection, with the maximal nonlocal conductance −2e 2 /h, is addressed by setting the chemical potentials of the leads properly. At this situation, the local Andreev reflection and the electron tunneling are completely eliminated, the incoming electrons can only be reflected as electrons or transmitted as holes, corresponding to the electron reflection and the crossed Andreev reflection respectively. The nonlocal conductance oscillates periodically with the length and the chemical potential of the superconductor. Our study shows that the phosphorene based junction can be used as the quantum device to generate entangled-electrons.

Functional Device Applications of Nanosilicon

2011 ◽  
Vol 470 ◽  
pp. 20-26 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Toshiyuki Ohta ◽  
Yoshiyuki Hirano ◽  
Romain Mentek ◽  
Bernard Gelloz
Keyword(s):  
Thermal Properties ◽  
Confinement Effect ◽  
Bulk Silicon ◽  
Electron Emitter ◽  
Ballistic Electron ◽  
Device Applications ◽  
Physical Functions ◽  
Strong Confinement

The particular physical functions of quantum-sized silicon have been investigated, along with exploration of their potential device applications. A strong confinement effect fully modifies the original optical, electrical, and thermal properties of bulk silicon. A discussion regarding their control and applications is presented, which addresses blue phosphorescence, enhanced photoconduction, operation of a ballistic electron emitter in solutions, and digital drive of a thermo-acoustic sound emitter.

Heteroepitaxy on Silicon by Molecular Beam Epitaxy

1988 ◽  
Vol 116 ◽  
Author(s):  
Leo J. Schowalter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
In Situ Observation ◽  
Free Energies ◽  
Practical Applications ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Device Applications ◽  
Heteroepitaxial Layers

AbstractIn recent years extensive research has been conducted on growing heteroepitaxial layers of insulators, metals, and other semiconductors on silicon. This work promises to extend the use of Si (or, at least, Si substrates) far beyond present day devices into hybred semiconductor devices, optoelectronics, ballistic electron devices, and three-dimensional device structures. However, the “art” of heteroepitaxy is still poorly understood and much work remains to be done to realize most practical applications. Molecular beam epitaxy (MBE) represents an attractive technique for research and development of heteroepitaxy because of its relatively low growth temperatures, flexibility in working with different materials, and by providing a good environment for in-situ observation of the heteroepitaxial process. Using examples from recent heteroepitaxial work by molecular beam epitaxy in the areas of CaF2, NiSi2 and CoSi2, and GaAs on Si, this paper discusses how heteroepitaxial quality is affected by the relative surface free energies and strain (due to both lattice and thermal expansion coefficient mismatch). The goal is to produce better heteroepitaxial layers for device applications by an improved understanding of the process.

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