Development of high quality superconducting resonators for quantum device applications

2013 ◽  
Author(s):  
Dong-Gwang Ha ◽  
Seon Hoo Kim ◽  
So-Yeon Jun ◽  
Seung Bo Shim ◽  
Woon Song ◽  
...  
Keyword(s):  
Superconducting Resonators ◽  
High Quality ◽  
Quantum Device ◽  
Device Applications

A New Approach Using Artificial Substrates for Growth of High-Quality Precipitate-Free HTS Thin Films, Toward Electronic Device Applications

2005 ◽  
Vol 868 ◽  
Author(s):  
K. Endo ◽  
P. Badica ◽  
H. Sato ◽  
H. Akoh
Keyword(s):  
Thin Films ◽  
Electronic Device ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Artificial Substrates ◽  
High Quality ◽  
New Approach ◽  
Mesa Structure ◽  
Device Applications ◽  
And Performance

AbstractHigh quality thin films of HTS have been grown by MOCVD on substrates with artificial steps of predefined height and width. The surface of the films grown on the steps having width equal to the ‘double of the migration length' of the atomic species depositing on the substrate is totally free of precipitates: precipitates are gathered at the step edges where the free energy is lowest. The method has several advantages: it is simple, universal (it is independent of the materials, substrates, deposition technique or application) and allows control of precipitates segregates so that the quality and growth conditions of the films are the same as for the films grown on conventional substrates. The method is expected to result in new opportunities for the device fabrication, design and performance. As an example we present successful fabrication of a mesa structure showing intrinsic Josephson effect. We have used thin films of Bi-2212/Bi-2223 superstructure grown on (001) SrTiO3 single crystal substrates with artificial steps of 20 μm.

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

RSC Advances ◽  
2015 ◽  
Vol 5 (21) ◽  
pp. 15795-15799 ◽  
Author(s):  
Qi Fu ◽  
Wenhui Wang ◽  
Lei Yang ◽  
Jian Huang ◽  
Jingyu Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tungsten Disulfide ◽  
Controllable Synthesis ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
Direct Band

Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.

Large-Scale Synthesis of Nickel Sulfide for Electronic Device Applications

MRS Advances ◽  
2020 ◽  
Vol 5 (52-53) ◽  
pp. 2727-2735
Author(s):  
Nidhi ◽  
Tashi Nautiyal ◽  
Samaresh Das
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Electronic Device ◽  
Electrical Performance ◽  
High Quality ◽  
X Ray ◽  
Device Applications ◽  
Large Scale Synthesis ◽  
Group 10

AbstractSeveral techniques have been employed for large-scale synthesis of group 10 transition metal dichalcogenides (TMDCs) based on platinum and palladium for nano- and opto-electronic device applications. Nickel Sulphides (NixSy), belonging to group 10 TMDC family, have been widely explored in the field of energy storage devices such as batteries and supercapacitors, etc. and commonly synthesized through the solution process or hydrothermal methods. However, the high-quality thin film growth of NixSy for nanoelectronic applications remains a central challenge. Here, we report the chemical vapor deposition (CVD) growth of NiS2 thin film onto a two-inch SiO2/Si substrate, for the first time. Techniques such as X-ray photoelectron spectroscopy, X-ray Diffraction, Raman Spectroscopy, Scanning Electron Microscopy, have been used to analyse the quality of this CVD grown NiS2 thin film. A high-quality crystalline thin film of thickness up to a few nanometres (~28 nm) of NiS2 has been analysed here. We also fabricated a field-effect device based on NiS2 thin film using interdigitated electrodes by optical lithography. The electrical performance of the fabricated device is characterized at room temperature. On applying the drain voltage from -2 to +2 V, the device shows drain current in the range of 10-9 A before annealing and in the range of 10-6 A after annealing. This, being comparable to that from devices based on MoS2 and other two-dimensional materials, projects CVD grown NiS2 as a good alternative material for nanoelectronic devices.

BeTe/Si heterostructures for MIS and quantum device applications

1999 ◽  
Vol 10 (2) ◽  
pp. 187-191 ◽  
Author(s):  
Shan Jiang ◽  
Pedro Barrios ◽  
Robert T Bate ◽  
Wiley P Kirk
Keyword(s):  
Quantum Device ◽  
Device Applications

Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

2012 ◽  
Vol 352 (1) ◽  
pp. 39-42 ◽  
Author(s):  
St.G. Müller ◽  
E.K. Sanchez ◽  
D.M. Hansen ◽  
R.D. Drachev ◽  
G. Chung ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
High Quality ◽  
Device Applications ◽  
Volume Production

High Quality Graphene Formation on 3C-SiC/4H-AlN/Si Heterostructure

2014 ◽  
Vol 806 ◽  
pp. 89-93 ◽  
Author(s):  
Sai Jiao ◽  
Yuya Murakami ◽  
Hiroyoki Nagasawa ◽  
Hirokazu Fukidome ◽  
Isao Makabe ◽  
...  
Keyword(s):  
Quality Improvement ◽  
Production Cost ◽  
Structural Quality ◽  
Si Substrate ◽  
High Quality ◽  
Device Applications ◽  
High Scalability ◽  
Nanoelectromechanical System ◽  
Sic Film

The growth of graphene on 3C-SiC/Si heterostructure is a promising approach, which provides low production cost, high scalability and easiness of nanoelectromechanical system fabrication. However, the quality of graphene is still insufficient for device applications due to mediocre morphological and structural quality of the 3C-SiC epilayers compared to bulk SiC crystals and to excessive Si out-diffusion from the Si substrate. Here, we propose a solution of inserting a 4H-AlN layer between 3C-SiC and Si, which allows us to polish the 3C-SiC film without worrying about enhancement of the Si out-diffusion despite the thinning after the polishing. With this insertion, a considerable quality improvement is achieved in our graphene on silicon.

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