NUMERICAL COMPUTATION OF ELECTRONIC PROPERTIES OF SEMICONDUCTOR HETEROSTRUCTURES FOR QUANTUM DEVICE APPLICATIONS

1995 ◽  
Vol 14 (2/3) ◽  
pp. 129-137 ◽  
Author(s):  
M.E. LAZZOUNI ◽  
L.J. SHAM
Keyword(s):  
Electronic Properties ◽  
Numerical Computation ◽  
Semiconductor Heterostructures ◽  
Quantum Device ◽  
Device Applications

Electronic Properties and Device Applications of III-V Compound Semiconductor Native Oxides

2006 ◽  
Author(s):  
Douglas C. Hall ◽  
Patrick J. Fay ◽  
Thomas H. Kosel ◽  
Bruce A. Bunker ◽  
Russell D. Dupuis
Keyword(s):  
Electronic Properties ◽  
Compound Semiconductor ◽  
Native Oxides ◽  
Device Applications

BeTe/Si heterostructures for MIS and quantum device applications

1999 ◽  
Vol 10 (2) ◽  
pp. 187-191 ◽  
Author(s):  
Shan Jiang ◽  
Pedro Barrios ◽  
Robert T Bate ◽  
Wiley P Kirk
Keyword(s):  
Quantum Device ◽  
Device Applications

SEMICONDUCTOR QUANTUM-WELL HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
L. L. Chang
Keyword(s):  
Quantum Well ◽  
Electronic Properties ◽  
Measurement Techniques ◽  
Semiconductor Heterostructures ◽  
Fundamental Physics ◽  
Quantum Regime ◽  
Semiconductor Quantum Well

AbstractActivities in semiconductor heterostructures are reviewed, with focus on the fundamental physics aspects in the quantum regime and with emphasis on recent experimental observations. The GaAs-GaAlAs is used to illustrate the general electronic properties of interest, which are obtained through various measurement techniques. Other heterostructures, including III-V, II(IV)-VI, and IV materials, are covered to the extent that they exhibit new and specific features.

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