scholarly journals Fabrication of Metallic Lines by Aerosol Jet Printing: Study of the Effect of Substrate Temperature on the Aspect Ratio

2018 ◽  
Vol 34 (6) ◽  
pp. 2777-2781 ◽  
Author(s):  
Alexey Anatolevich Efimov ◽  
Pavel Vladimirovich Arsenov ◽  
Kirill Nikolaevich Minkov ◽  
Victor Vladimirovich Ivanov
Keyword(s):  
Aspect Ratio ◽  
Substrate Temperature ◽  
High Aspect Ratio ◽  
High Density ◽  
Heated Substrate ◽  
Jet Printing ◽  
Aerosol Jet Printing

In this paper we investigated the effect of substrate temperature (25-300 °C) on the aspect ratio (thickness/width) of the silver lines formed by aerosol jet printing (AJP). This effect was studied by varying the speed of substrate (50-250 mm/min) and the number of printing layers (1-25 layers) in order to obtain lines with high aspect ratio. It is shown that AJP on a heated substrate at a temperature equal to >100 °C allows to increase the aspect ratio of the lines more than 17 times in comparison with conventional AJP. It is established that the aspect ratio of the lines increases with the increase in the number of printing layers and the decrease in the speed of substrate. Silver lines with high aspect ratio of 1.7 with a width of about 25 μm were formed. This result is important for the formation of current-carrying microcircuits with a high density of elements.

scholarly journals Aerosol Jet Printing of Silver Lines with A High Aspect Ratio on A Heated Silicon Substrate

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 730 ◽  
Author(s):  
Alexey Efimov ◽  
Pavel Arsenov ◽  
Denis Kornyushin ◽  
Anna Lizunova ◽  
Ivan Volkov ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Aspect Ratio ◽  
Substrate Temperature ◽  
High Aspect Ratio ◽  
Silicon Substrate ◽  
Silver Films ◽  
Aspect Ratios ◽  
Jet Printing ◽  
Rate Of Evaporation ◽  
Aerosol Jet Printing

In this work, we studied the formation of conductive silver lines with high aspect ratios (AR = thickness/width) > 0.1 using the modernized method of aerosol jet printing on a heated silicon substrate. The geometric (AR) and electrical (resistivity) parameters of the formed lines were investigated depending on the number of printing layers (1–10 layers) and the temperature of the substrate (25–300 °C). The AR of the lines increased as the number of printing layers and the temperature of the substrate increased. An increase in the AR of the lines with increasing substrate temperature was associated with a decrease in the ink spreading as a result of an increase in the rate of evaporation of nano-ink. Moreover, with an increase in the substrate temperature of more than 200 °C, a significant increase in the porosity of the formed lines was observed, and as a result, the electrical resistivity of the lines increased significantly. Taking into account the revealed regularities, it was demonstrated that the formation of silver lines with a high AR > 0.1 and a low electrical resistivity of 2–3 μΩ∙cm is advisable to be carried out at a substrate temperature of about 100 °C. The adhesion strength of silver films formed on a heated silicon substrate is 2.8 ± 0.9 N/mm2, which further confirms the suitability of the investigated method of aerosol jet printing for electronic applications.

Optimization of Aerosol Jet Printing for High-Resolution, High-Aspect Ratio Silver Lines

2013 ◽  
Vol 5 (11) ◽  
pp. 4856-4864 ◽  
Author(s):  
Ankit Mahajan ◽  
C. Daniel Frisbie ◽  
Lorraine F. Francis
Keyword(s):  
High Resolution ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Jet Printing ◽  
Aerosol Jet Printing

High Density Through-Wafer Electrical Interconnects for Direct-Chip-Attach, Device-Scale MEMS Packaging

2000 ◽  
Author(s):  
Jordan Neysmith ◽  
Daniel F. Baldwin
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Solder Bump ◽  
Silicon Wafers ◽  
High Density ◽  
Fabrication Process ◽  
Full Thickness ◽  
Mems Packaging ◽  
The Core ◽  
Electrical Interconnects

Abstract This paper outlines the motivation behind, and fabrication process for, a novel through-wafer electrical interconnect structure. The interconnect was designed in order to test the feasibility of routing electrical signals through full thickness silicon wafers. The completed interconnect is compatible with solder-based direct-chip-attach (DCA) processing and CMOS circuitry. The core of the through-wafer electrical interconnect structure consists of a high-aspect-ratio via which is subsequently insulated and metallized. On the wafer backside, an under bump metallurgy (UBM) is added around the via opening and a solder bump is formed to complete the interconnect.

scholarly journals Black silicon with high density and high aspect ratio nanowhiskers

2011 ◽  
Vol 22 (23) ◽  
pp. 235307 ◽  
Author(s):  
S Kalem ◽  
P Werner ◽  
Ö Arthursson ◽  
V Talalaev ◽  
B Nilsson ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Density ◽  
Black Silicon
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