Oxygen-Containing Diatomic Dications in the Gas Phase

2009 ◽  
Vol 15 (2) ◽  
pp. 315-324 ◽  
Author(s):  
Jirí Fišer ◽  
Klaus Franzreb ◽  
Jan Lörinčík ◽  
Peter Williams
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Mass Spectra ◽  
Theoretical Study ◽  
Ion Beam ◽  
High Current ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Wide Range ◽  
Beam Sputtering

A variety of oxygen-containing diatomic dications XO2+ can be produced in the gas phase by prolonged high-current 16O− ion surface bombardment (oxygen ion beam sputtering) of a wide range of sample materials. These gas-phase species were detected by mass spectrometry at half-integer m/z values for ion flight times of the order of ∼10−5 s. Examples provided here include ion mass spectra of AsO2+, GaO2+, SbO2+, AgO2+, CrO2+ and BeO2+. A detailed theoretical study of the diatomic dication system BeO2+ is also presented.

Ion Beam Sputter Deposition of Refractory Metal Oxides

1994 ◽  
Vol 354 ◽  
Author(s):  
B.E. Kempf ◽  
H.W. Dinges ◽  
A. PÖcker
Keyword(s):  
Near Infrared ◽  
Filter Design ◽  
Ion Beam ◽  
Optical Filter ◽  
Pure Metal ◽  
Ion Beam Sputtering ◽  
Infrared Wavelength ◽  
Wide Range ◽  
Beam Sputtering ◽  
Ion Beam Sputter Deposition

AbstractOxides of hafnium, niobium, tantalum, and zirconium are deposited by ion beam sputtering of the pure metal targets using CO2 as working gas. The resulting thin films are amorphous, featureless smooth and of excellent adherence to semiconductor substrates. Despite a certain content of carbon they are highly transparent in the visible and near infrared wavelength range as determined by spectroscopic ellipsometry. Their wide range of refractive indices makes them suitable for multilayer optical filter design.

Effects of oxygen ion assist at 1–10 eV on growth of Bi2(Sr,Ca)2CuOx films at 540 °C by ion–beam sputtering

1997 ◽  
Vol 15 (4) ◽  
pp. 1990-1998 ◽  
Author(s):  
T. Endo ◽  
H. Yan ◽  
K. Abe ◽  
S. Nagase ◽  
Y. Ishida ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering

Synthesis of tin oxide films by dual ion beam sputtering using Sn target and oxygen ion beam

1999 ◽  
Vol 112 (1-3) ◽  
pp. 267-270 ◽  
Author(s):  
Yong-Sahm Choe ◽  
Jae-Ho Chung ◽  
Dae-Seung Kim ◽  
Hong Koo Baik
Keyword(s):  
Tin Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Tin Oxide Films

Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
R. Valizadeh ◽  
J.S. Colligon ◽  
S.E. Donnelly ◽  
C.A. Faunce ◽  
D. Park ◽  
...  
Keyword(s):  
Nitrogen Content ◽  
Ion Beam ◽  
Arrival Rate ◽  
Zirconium Nitride ◽  
Ion Beam Sputtering ◽  
Tem Analysis ◽  
Grain Sizes ◽  
Composition And Structure ◽  
Wide Range ◽  
Beam Sputtering

AbstractThe growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at. %, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes l-15nm which depend on the nitrogen content and the deposition temperature.

Ion beam sputtering of SnO2 with low energy oxygen ion beams

1999 ◽  
Vol 341 (1-2) ◽  
pp. 230-233 ◽  
Author(s):  
Y.-S Choe ◽  
J.-H Chung ◽  
D.-S Kim ◽  
H.K Baik
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering
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