Effects of oxygen ion assist at 1–10 eV on growth of Bi2(Sr,Ca)2CuOx films at 540 °C by ion–beam sputtering

1997 ◽  
Vol 15 (4) ◽  
pp. 1990-1998 ◽  
Author(s):  
T. Endo ◽  
H. Yan ◽  
K. Abe ◽  
S. Nagase ◽  
Y. Ishida ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering

Synthesis of tin oxide films by dual ion beam sputtering using Sn target and oxygen ion beam

1999 ◽  
Vol 112 (1-3) ◽  
pp. 267-270 ◽  
Author(s):  
Yong-Sahm Choe ◽  
Jae-Ho Chung ◽  
Dae-Seung Kim ◽  
Hong Koo Baik
Keyword(s):  
Tin Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Tin Oxide Films

Ion beam sputtering of SnO2 with low energy oxygen ion beams

1999 ◽  
Vol 341 (1-2) ◽  
pp. 230-233 ◽  
Author(s):  
Y.-S Choe ◽  
J.-H Chung ◽  
D.-S Kim ◽  
H.K Baik
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering

Oxygen-Containing Diatomic Dications in the Gas Phase

2009 ◽  
Vol 15 (2) ◽  
pp. 315-324 ◽  
Author(s):  
Jirí Fišer ◽  
Klaus Franzreb ◽  
Jan Lörinčík ◽  
Peter Williams
Keyword(s):  
Mass Spectrometry ◽  
Gas Phase ◽  
Mass Spectra ◽  
Theoretical Study ◽  
Ion Beam ◽  
High Current ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Wide Range ◽  
Beam Sputtering

A variety of oxygen-containing diatomic dications XO2+ can be produced in the gas phase by prolonged high-current 16O− ion surface bombardment (oxygen ion beam sputtering) of a wide range of sample materials. These gas-phase species were detected by mass spectrometry at half-integer m/z values for ion flight times of the order of ∼10−5 s. Examples provided here include ion mass spectra of AsO2+, GaO2+, SbO2+, AgO2+, CrO2+ and BeO2+. A detailed theoretical study of the diatomic dication system BeO2+ is also presented.

Effects of O2 Ion Bombardment of Y-Ba-Cu-Oxide during Thin Film Growth

1989 ◽  
Vol 157 ◽  
Author(s):  
G. Metzger ◽  
C. B. Fleddermann
Keyword(s):  
Oxygen Content ◽  
Film Growth ◽  
Ion Beam ◽  
Optical Emission ◽  
Beam Current ◽  
Ion Beam Sputtering ◽  
Low Oxygen ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Direct Incorporation

ABSTRACTOxygen ion beam bombardment has been studied as a means for incorporating oxygen into thin films of Y-Ba-Cu-oxide either by enhancing the transport of oxygen to substrates during ion-beam sputtering, or by direct incorporation of oxygen with ion-assisted deposition. Optical emission spectroscopy was used to study the ion-beam bombardment of bulk superconducting targets as the oxygen content of the ion beam was varied. This study showed that oxygen did not directly combine with metallic elements in the target to increase the oxygen content of the stream of particles moving toward the substrate. Addition of a second ion beam directing oxygen ions toward the substrate during film growth caused large variations in the stoichiometry of the deposited films. At low oxygen ion currents, no increase in the oxygen content of the films was detected, while at relatively high currents, the oxygen incorporation increased. However, the sputtering of the metallic components of the film increased as the oxygen beam current increased, leading to very low growth rates.

Pyroelectric Properties of Lead Based Ferroelectric thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Patel ◽  
D.A. Tossell ◽  
N.M. Shorrocks ◽  
R. W. Whatmore ◽  
R. Watton
Keyword(s):  
Ion Beam ◽  
Sol Gel ◽  
High Energy ◽  
Pyroelectric Coefficient ◽  
Dielectric Constants ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
La Doped

AbstractLead based thin ferroelectric films have been prepared using both sol-gel and dual ion beam sputtering (DIBS) processes. Material compositions within the PbTiO3 and PLZT system have been deposited by both techniques onto metallised silicon. By using a standard sol-gel prepared solution, modified with acetylacetone and spin-coating, lµm thick fully perovskite layers, were obtained at low temperature (450°) with some preferred orientation. The grain size was in the range 0.2-0.4µm. A dielectric constant of 400 and a reversible pyroelectric coefficient of 1.2 × 10−4Cm−2K−1 were obtained. In contrast, a range of capping layers (SiO2, A12O3, BPSG) on silicon have been investigated using the DIBS process. Highly crystalline (100) and (111) films were readily produced at temperatures in excess of 550°, at a growth rate of 0.3µm/hour. Control of stoichiometry has also been studied in detail, by sputtering of a composite metal-ceramic target with a high energy Kr beam and by bombarding the growing film with a low energy oxygen ion-beam. Dielectric constants of 200-300, losses below 0.015 and resistivities above 1010Ωm have been achieved. A pyroelectric coefficient of the order of 2.5 × 10−4Cm−2K-1, pre-poled for a La-doped film on BPSG capped Si was obtained, which did not increase significantly on poling.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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