Impact of Random Interface Traps on Asymmetric Characteristic Fluctuation of 16-nm-Gate MOSFET Devices

Electrical characteristic fluctuation of 16-nm-gate high-κ/metal gate bulk FinFET devices in the presence of random interface traps

Nanoscale Research Letters ◽

10.1186/1556-276x-9-633 ◽

2014 ◽

Vol 9 (1) ◽

Cited By ~ 2

Author(s):

Sheng-Chia Hsu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Interface Traps ◽

Metal Gate ◽

Random Interface ◽

Characteristic Fluctuation

Download Full-text

Random interface-traps-induced characteristic fluctuation in 16-nm high-к/metal gate CMOS device and SRAM circuit

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144566 ◽

2011 ◽

Author(s):

Hui-Wen Chen ◽

Yung-Yueh Chiu ◽

Yiming Li

Keyword(s):

Interface Traps ◽

Metal Gate ◽

Random Interface ◽

Characteristic Fluctuation

Download Full-text

Random Interface-Traps-Induced Characteristic Fluctuation in 16-nm High-k/Metal Gate CMOS Device and Digital Circuit

10.7567/ssdm.2011.p-3-22l ◽

2011 ◽

Author(s):

Y. Y. Chiu ◽

Y. Li ◽

H. W. Cheng

Keyword(s):

Digital Circuit ◽

Interface Traps ◽

Metal Gate ◽

Random Interface ◽

High K ◽

Characteristic Fluctuation

Download Full-text

Impact of Random Interface Traps and Random Dopants in High-$k$ /Metal Gate Junctionless FETs

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2014.2312482 ◽

2014 ◽

Vol 13 (3) ◽

pp. 584-588 ◽

Cited By ~ 5

Author(s):

Yijiao Wang ◽

Peng Huang ◽

Kangliang Wei ◽

Lang Zeng ◽

Xiaoyan Liu ◽

...

Keyword(s):

Interface Traps ◽

Metal Gate ◽

Random Interface ◽

Random Dopants

Download Full-text

3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices

69th Device Research Conference ◽

10.1109/drc.2011.5994435 ◽

2011 ◽

Cited By ~ 1

Author(s):

Hui-Wen Cheng ◽

Yung-Yueh Chiu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

3D Simulation ◽

Interface Traps ◽

Oxide Interface ◽

Random Dopants ◽

Characteristic Fluctuation

Download Full-text

Effects of single grain boundary and random interface traps on electrical variations of sub-30 nm polysilicon nanowire structures

Microelectronic Engineering ◽

10.1016/j.mee.2015.09.018 ◽

2016 ◽

Vol 149 ◽

pp. 113-116 ◽

Cited By ~ 6

Author(s):

Hyeongwan Oh ◽

Jungsik Kim ◽

Junyoung Lee ◽

Taiuk Rim ◽

Chang-Ki Baek ◽

...

Keyword(s):

Grain Boundary ◽

Interface Traps ◽

Random Interface ◽

Single Grain

Download Full-text

Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-$\kappa$/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc08 ◽

2012 ◽

Vol 51 ◽

pp. 04DC08

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Metal Gate ◽

Inverter Circuit ◽

Characteristic Fluctuation

Download Full-text

Electrical characteristic fluctuation of 16 nm MOSFETs induced by random dopants and interface traps

2011 IEEE International Conference on IC Design & Technology ◽

10.1109/icicdt.2011.5783187 ◽

2011 ◽

Cited By ~ 2

Author(s):

Hui-Wen Cheng ◽

Yung-Yueh Chiu ◽

Yiming Li

Keyword(s):

Electrical Characteristic ◽

Interface Traps ◽

Random Dopants ◽

Characteristic Fluctuation

Download Full-text

Random telegraph noise in gate-all-around silicon nanowire MOSFETs induced by a single charge trap or random interface traps

Journal of Computational Electronics ◽

10.1007/s10825-019-01438-9 ◽

2020 ◽

Vol 19 (1) ◽

pp. 253-262 ◽

Cited By ~ 2

Author(s):

Sekhar Reddy Kola ◽

Yiming Li ◽

Narasimhulu Thoti

Keyword(s):

Silicon Nanowire ◽

Interface Traps ◽

Single Charge ◽

Random Telegraph Noise ◽

Charge Trap ◽

Random Interface ◽

Telegraph Noise ◽

Nanowire Mosfets

Download Full-text

Statistical device simulation of physical and electrical characteristic fluctuations in 16-nm-gate high-κ/metal gate MOSFETs in the presence of random discrete dopants and random interface traps

Solid-State Electronics ◽

10.1016/j.sse.2012.05.017 ◽

2012 ◽

Vol 77 ◽

pp. 12-19 ◽

Cited By ~ 7

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Electrical Characteristic ◽

Device Simulation ◽

Interface Traps ◽

Metal Gate ◽

Random Interface ◽

Random Discrete Dopants

Download Full-text