3D simulation of electrical characteristic fluctuation induced by interface traps at Si/high-к oxide interface and random dopants in 16-nm-Gate CMOS devices

2011 ◽  
Author(s):  
Hui-Wen Cheng ◽  
Yung-Yueh Chiu ◽  
Yiming Li
Keyword(s):  
Electrical Characteristic ◽  
3D Simulation ◽  
Interface Traps ◽  
Oxide Interface ◽  
Random Dopants ◽  
Characteristic Fluctuation

2D MoS 2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO 2 /HfO 2 Dielectrics and Oxide Interface Traps

2021 ◽  
pp. 2100074
Author(s):  
Livia Janice Widiapradja ◽  
Taewook Nam ◽  
Yeonsu Jeong ◽  
Hye‐Jin Jin ◽  
Yangjin Lee ◽  
...  
Keyword(s):  
Charge Injection ◽  
Interface Traps ◽  
Oxide Interface

Impact of Random Interface Traps and Random Dopants in High-$k$ /Metal Gate Junctionless FETs

2014 ◽  
Vol 13 (3) ◽  
pp. 584-588 ◽  
Author(s):  
Yijiao Wang ◽  
Peng Huang ◽  
Kangliang Wei ◽  
Lang Zeng ◽  
Xiaoyan Liu ◽  
...  
Keyword(s):  
Interface Traps ◽  
Metal Gate ◽  
Random Interface ◽  
Random Dopants

A Method to Characterize n[sup +]-Polysilicon/Oxide Interface Traps in Ultrathin Oxides

2001 ◽  
Vol 4 (6) ◽  
pp. G47 ◽  
Author(s):  
Kow Ming Chang ◽  
Yuan Hung Chung ◽  
Tzyk Cheang Lee ◽  
Yong Long Sun
Keyword(s):  
Interface Traps ◽  
Oxide Interface ◽  
Ultrathin Oxides
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