Failure Mechanisms in Modern Integrated Circuits and Industry Best Practices for Reliability Degradation Predictions

2017 ◽  
pp. 443-449
Author(s):  
Fernando Guarin
Keyword(s):  
Best Practices ◽  
Integrated Circuits ◽  
Failure Mechanisms

Combine Micro-Probing and OBIRCH to Catch Non-Recognizable Fault in RF and Mixed-Mode Integrated Circuits

2007 ◽  
Author(s):  
Cha-Ming Shen ◽  
Yen-Long Chang ◽  
Lian-Fon Wen ◽  
Tan-Chen Chuang ◽  
Shi-Chen Lin ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Radio Frequency ◽  
Failure Analysis ◽  
Case Studies ◽  
Mixed Mode ◽  
Failure Mechanisms ◽  
Deep Submicron ◽  
Digital Logic ◽  
Successful Approach ◽  
Cmos Processes

Abstract Highly-integrated radio frequency and mixed-mode devices that are manufactured in deep-submicron or more advanced CMOS processes are becoming more complex to analyze. The increased complexity presents us with many eccentric failure mechanisms that are uniquely different from traditional failure mechanisms found during failure analysis on digital logic applications. This paper presents a novel methodology to overcome the difficulties and discusses two case studies which demonstrate the application of the methodology. Through the case studies, the methodology was proven to be a successful approach. It is also proved how this methodology would work for such non-recognizable failures.

Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids

1994 ◽  
Vol 338 ◽  
Author(s):  
A. S. Oates ◽  
J. R. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Temperature Dependence ◽  
Failure Mechanisms ◽  
Al Alloy ◽  
Stress Gradients ◽  
Failure Times ◽  
Effects Of Stress ◽  
The Impact

ABSTRACTElectromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients.

Reliability Assessment: New Tools for the Next Generation of Packages

2008 ◽  
Vol 5 (2) ◽  
pp. 44-51
Author(s):  
Isabelle Bord ◽  
Bruno Levrier ◽  
Yannick Deshayes ◽  
Laurent Béchou ◽  
Yves Ousten
Keyword(s):  
Integrated Circuits ◽  
Acoustic Analysis ◽  
Failure Mechanisms ◽  
Reliability Assessment ◽  
Integrated Systems ◽  
Principal Support ◽  
Next Generation ◽  
X Ray ◽  
Plastic Packages

Reliability assessment of components, integrated circuits, and microassemblies is clearly identified as a major factor in the on-going development of microelectronics. Since the last decade, the 3-D packaging and interconnections have emerged, and integrated packages have been developed. System-in-package (SIP) has become the principal support for integrated systems. Numerous problems are linked to their decreasing dimensions, the increasing numbers of interfaces (multichips stacked one on top of another), and plastic packages that must tolerate higher temperatures (RoHS). How is the reliability of such components assessed? What are the tools to investigate failure mechanisms in these new packages? This article gives some solutions mixing acoustic analysis, x-ray microscopy, electrical testing, and the use of specific tests points (sensors) placed in the package.

scholarly journals Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

2016 ◽  
Vol 858 ◽  
pp. 1112-1116 ◽  
Author(s):  
David J. Spry ◽  
Philip G. Neudeck ◽  
Liang Yu Chen ◽  
Laura J. Evans ◽  
Dorothy Lukco ◽  
...  
Keyword(s):  
Conference Proceedings ◽  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Failure Mechanisms ◽  
Operating Time ◽  
Test Conditions ◽  
Effect Transistor ◽  
Physical Degradation

The fabrication and prolonged 500 °C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some circuits functioned more than 3000 hours at 500 °C, the majority of packaged ICs from this wafer electrically failed after less than 200 hours of operation in the same test conditions. This work examines the root physical degradation and failure mechanisms believed responsible for observed large discrepancies in 500 °C operating time. Evidence is presented for four distinct issues that significantly impacted 500 °C IC operational yield and lifetime for this wafer.

Research Progress on Electrostatic Discharge Failure Models in Semiconductor Materials

2012 ◽  
Vol 548 ◽  
pp. 527-531 ◽  
Author(s):  
Xiao Yu Liu ◽  
Jiang Shao ◽  
Xing Hao Wang ◽  
Feng Ming Lu
Keyword(s):  
Integrated Circuits ◽  
Failure Modes ◽  
Electrostatic Discharge ◽  
Failure Mechanisms ◽  
Research Progress ◽  
Failure Model ◽  
High Current ◽  
Operation Condition ◽  
Physics Of Failure ◽  
Failure Models

Electrostatic discharge (ESD) is a single, fast, high current transfer of electrostatic charge between two objects at different electrostatic potentials, and it is one of the most important failure mechanisms in integrated circuits due to their complex operation condition. The modes, mechanism, and models of the ESD failure were discussed. Firstly failure modes of ESD were classified and the failure mechanisms were described. Then three failure models including Wunsch and Bell model, Speakman model and Tasca model were summarized. The differences of the assumption and application area of these models were discussed in detail later. At last, suggestions for future studying ESD physics of failure model were proposed.

Sign in / Sign up

Export Citation Format

Share Document