Electromigration Failure of Narrow Al Alloy Conductors Containing Stress - Voids

1994 ◽  
Vol 338 ◽  
Author(s):  
A. S. Oates ◽  
J. R. Lloyd

ABSTRACTElectromigration and stress - induced voiding are two of the most important metallization failure mechanisms for integrated circuits. These mechanisms are not independent since stress voiding may affect electromigration. In this paper we examine the impact of stress voiding on electromigration failure of narrow Al alloy stripes, and show that the major effects of stress voiding are significant reductions in failure times, and a non-Arrenhius temperature dependence of the lifetime. We propose a model to explain these effects based on the formation of flux divergences at pre-existing voids due to stress gradients.

Author(s):  
Robert C. Cieslinski ◽  
H. Craig Silvis ◽  
Daniel J. Murray

An understanding of the mechanical behavior polymers in the ductile-brittle transition region will result in materials with improved properties. A technique has been developed that allows the realtime observation of dynamic plane stress failure mechanisms in the transmission electron microscope. With the addition of a cryo-tensile stage, this technique has been extented to -173°C, allowing the observation of deformation during the ductile-brittle transition.The technique makes use of an annealed copper cartridge in which a thin section of bulk polymer specimen is bonded and plastically deformed in tension in the TEM using a screw-driven tensile stage. In contrast to previous deformation studies on solvent-cast films, this technique can examine the frozen-in morphology of a molded part.The deformation behavior of polypropylene and polypropylene impact modified with EPDM (ethylene-propylene diene modified) and PE (polyethylene) rubbers were investigated as function of temperature and the molecular weight of the impact modifier.


Author(s):  
Cha-Ming Shen ◽  
Yen-Long Chang ◽  
Lian-Fon Wen ◽  
Tan-Chen Chuang ◽  
Shi-Chen Lin ◽  
...  

Abstract Highly-integrated radio frequency and mixed-mode devices that are manufactured in deep-submicron or more advanced CMOS processes are becoming more complex to analyze. The increased complexity presents us with many eccentric failure mechanisms that are uniquely different from traditional failure mechanisms found during failure analysis on digital logic applications. This paper presents a novel methodology to overcome the difficulties and discusses two case studies which demonstrate the application of the methodology. Through the case studies, the methodology was proven to be a successful approach. It is also proved how this methodology would work for such non-recognizable failures.


Author(s):  
Ching-Lang Chiang ◽  
Neeraj Khurana ◽  
Daniel T. Hurley ◽  
Ken Teasdale

Abstract Backside emission microscopy on heavily doped substrate materials was analyzed from the viewpoint of optical absorption by the substrate and sample preparation technique. Although it was widely believed that silicon is transparent to infrared (IR) radiation, we demonstrated by using published absorption data that silicon with doping levels above 5 x 1018cm-3 is virtually opaque, leaving only a narrow transmission window around the energy bandgap. Because the transmission depends exponentially on the thickness of die, thinning to below 100µm is shown to be required. Even an advanced IR sensor such as HgCdTe would find little light to detect without thinning the die. For imaging the circuit, an IR laser-based system produced poor images in which the diffraction patterns often ruined the contrast and obscured the image. Hence, a precise, controlled die thinning technique is required both for emission detection and backside imaging. A thinning and polishing technique was briefly described that was believed to be applicable to most ceramic packages. A software technique was employed to solve the image quality problem commonly encountered in backside imaging applications using traditional microscope light source and a scientific grade CCD camera. Finally, we showed the impact of die thickness on imaging circuits on a heavily doped n type substrate.


Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).


Author(s):  
Apangshu Das ◽  
Sambhu Nath Pradhan

Background: Output polarity of the sub-function is generally considered to reduce the area and power of a circuit at the two-level realization. Along with area and power, the power-density is also one of the significant parameter which needs to be consider, because power-density directly converges to circuit temperature. More than 50% of the modern day integrated circuits are damaged due to excessive overheating. Methods: This work demonstrates the impact of efficient power density based logic synthesis (in the form of suitable polarity selection of sub-function of Programmable Logic Arrays (PLAs) for its multilevel realization) for the reduction of temperature. Two-level PLA optimization using output polarity selection is considered first and compared with other existing techniques and then And-Invert Graphs (AIG) based multi-level realization has been considered to overcome the redundant solution generated in two-level synthesis. AIG nodes and associated power dissipation can be reduced by rewriting, refactoring and balancing technique. Reduction of nodes leads to the reduction of the area but on the contrary increases power and power density of the circuit. A meta-heuristic search approach i.e., Nondominated Sorting Genetic Algorithm-II (NSGA-II) is proposed to select the suitable output polarity of PLA sub-functions for its optimal realization. Results: Best power density based solution saves up to 8.29% power density compared to ‘espresso – dopo’ based solutions. Around 9.57% saving in area and 9.67% saving in power (switching activity) are obtained with respect to ‘espresso’ based solution using NSGA-II. Conclusion: Suitable output polarity realized circuit is converted into multi-level AIG structure and synthesized to overcome the redundant solution at the two-level circuit. It is observed that with the increase in power density, the temperature of a particular circuit is also increases.


2015 ◽  
Vol 830-831 ◽  
pp. 306-309
Author(s):  
Niraj Srivastava ◽  
Abhishek Upadhyay ◽  
Sandeep Kumar ◽  
Diva ◽  
Jaspreet Singh ◽  
...  

This paper explains the technique of explosive welding for joining SS304 and Al 6061 using Copper interlayer. The joining was done in two stages. In the first stage SS304 (thickness: 20 mm) was joined to Copper (thickness: 3mm). Second stage involved joining of SS-Cu plate to Al 6061 (thickness: 8 mm).The paper presents detailed discussion on important parameters required for explosive welded process. The most important parameter is minimum and maximum flyer plate velocity required for creating the impact. Collision angle and angle of impact are also discussed. Another important parameter is the Velocity of detonation (VOD) of explosive to be used. The explosives used have VOD of the order of 2500 m/s and 1600 m/sec. Since the explosive welding process involves formation of jet between two surface, therefore surface conditions of the base and flyer plate like its flatness, roughness and cleanliness which are very critical for proper joining have been discussed in this paper. Chisel test (which is considered to be most rugged test) was conducted on the joint. The test confirmed successful joining.The paper explains how use of trimonite expands the weldability window in comparison to NGU when used for direct SS to Al alloy welding.It also compares the results obtained by use of two different powder explosives to obtain the same tri-layered plate via two different routes. The results are particularly interesting because both the explosives have substantial difference in their properties such as Velocity of Detonation, Gurney Characteristic Velocity, density and homogeneity which can be used as advantages from different angles of views.


2007 ◽  
Vol 40 (4) ◽  
pp. 675-683 ◽  
Author(s):  
Cristy L. Azanza Ricardo ◽  
Mirco D'Incau ◽  
Paolo Scardi

A new procedure is proposed to determine sub-surface residual stress gradients by laboratory X-ray diffraction measurements at different depths using a chemical layer-removal technique. The standard correction algorithm for stress relaxation due to layer removal is improved by including corrections for X-ray absorption, and by the addition of constraints imposed by the mechanical equilibrium conditions. Besides correcting the data,i.e.providing more reliable through-thickness residual stress trends, the proposed procedure also provides an elastically compatible and plausible estimate of the residual stress inside the component, well beyond the measured region. The application of the model is illustrated for a set of Al-alloy components shot-peened at different Almen intensities. Results are compared with those given by `blind hole drilling', which is an independent and partly destructive method.


2020 ◽  
Vol 6 ◽  
pp. 69-74
Author(s):  
V.V. Kudinov ◽  
◽  
I.K. Krylov ◽  
N.V. Korneeva ◽  
◽  
...  

The low-velosity impact properties and failure mechanisms of ultra-high molecular weight polyethylene (UHMWPE) fiber (Dyneema®SK-75) and a composite material (CM) based on it with the rigid and flexible matrices were investigated by the “Impact Break” (IB) method. A fundamental difference in deformation behavior and failure mechanisms upon impact on the UHMWPE-fiber and on the CM based on this fiber has been investigated experimentally. It is shown that impact has a little effect on the properties of UHMWPE-fiber, since it is an isotropic material. It has been established that upon impact, the properties of a fiber without a matrix were significantly higher than the properties of CM based on it. Impact action stimulates the interaction between CM components (fibers and matrix). Mechanism of stepwise deformation of anisotropic CM is occurred, which begins from the first moment of impact and ends with the destruction of the CM. A “stairway of deformation” behavior is observed in anisotropic materials. Stepwise deformation is the main form of deformation and the basic mechanism of failure of anisotropic composite materials upon impact.


2017 ◽  
Vol 898 ◽  
pp. 679-683
Author(s):  
Cheng Chen ◽  
Jin Liang Hu ◽  
Lang Xiang Zhong ◽  
Bo Zhang

The diffusion behavior of Ce-Al alloy melt at three temperatures of 943K, 953K and 963K was investigated by sliding shear method. The inter-diffusion constants D show Arrhenius-type temperature dependence in the investigated regimes. Compared with the previous results achieved in Ce-Cu melt, liquid Ce-Al displays a much slower diffusion behavior and rather higher activation energy ED, which was caused by the strong interaction between Ce and Al.


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