Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

2011 ◽  
pp. 322-332
Author(s):  
C Jin ◽  
X Wu ◽  
L Zhuge
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Temperature Growth ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Dual ion beam sputtering deposition of silicon oxynitride thin films

1996 ◽  
Author(s):  
Francesca Sarto ◽  
Antonella Rizzo ◽  
Rossella Giorgi ◽  
S. Turtu ◽  
Salvatore Scaglione
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Silicon Oxynitride ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Room-temperature preparation and properties of cadmium sulfide thin films by ion-beam sputtering deposition

2013 ◽  
Vol 273 ◽  
pp. 491-495 ◽  
Author(s):  
Guang-Xing Liang ◽  
Ping Fan ◽  
Zhuang-Hao Zheng ◽  
Jing-Ting Luo ◽  
Dong-Ping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Temperature Preparation

scholarly journals Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
C. G. Jin ◽  
X. M. Wu ◽  
L. J. Zhuge
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Ion Beam ◽  
Substrate Surface ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Sic Films

Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering
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