Effect of RF Plasma Power and Deposition Temperature on the Surface Properties of Tin Oxide Deposited by Modified Plasma Enhanced Chemical Vapor Deposition

2009 ◽  
Vol 1 (3) ◽  
pp. 254-261 ◽  
Author(s):  
S. G. Ansari ◽  
M. A. Dar ◽  
Z. A. Ansari ◽  
Hyung Kee Seo ◽  
Young-Soon Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Properties ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Power

Phase Diagrams for the Optimization of rf Plasma Enhanced Chemical Vapor Deposition of a-Si:H: Variations in Plasma Power and Substrate Temperature

2001 ◽  
Vol 664 ◽  
Author(s):  
Andre S. Ferlauto ◽  
Randy J. Koval ◽  
Christopher R. Wronski ◽  
Robert W. Collins
Keyword(s):  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Phase Diagrams ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Surface Roughening ◽  
Plasma Power ◽  
Solar Cell Performance ◽  
Roughening Transition

ABSTRACTReal time spectroscopic ellipsometry (RTSE) has been applied to characterize surface roughening transitions during the growth of undoped hydrogenated silicon (Si:H) thin films by rf plasma-enhanced chemical vapor deposition (PECVD). In particular, the amorphous–to–amorphous surface roughening transition [→] and the amorphous–to–(mixed-phase-microcrystalline) roughening transition [a→(a+µc)] observed during Si:H growth have been studied under different PECVD conditions of hydrogen dilution ratio R=[H2]/[SiH4], rf plasma power P, and substrate temperature T. For Si:H growth on crystalline Si substrates under the different conditions, phase diagrams have been constructed by plotting the bulk film thicknesses at which these transitions occur as a function of R. The effects of the substrate (c-Si wafers versus amorphous Si:H films) on the a→(a+µc) transition of the phase diagram are also explored. The results provide deeper insights into recent attempts to improve the material properties and solar cell performance for a-Si:H i-layers prepared by rf PECVD at higher rates.

The Dependence of Defect Density in GexSi1−x/Si Heterostructures Grown by Remote Plasma-Enhanced Chemical Vapor Deposition on Deposition Parameters

1992 ◽  
Vol 263 ◽  
Author(s):  
D. Kinosky ◽  
R. Qian ◽  
T. Hsu ◽  
J. Irby ◽  
A. Mahajan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Dislocation Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Defect Density ◽  
Chemical Vapor ◽  
Misfit Dislocations ◽  
Plasma Power ◽  
Remote Plasma ◽  
Density Peaks

ABSTRACTThe density of misfit dislocations in GexSi1−x films has been measured as a function of deposition temperature and r-f plasma power in Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD). The misfit dislocation density decreases as the deposition temperature is lowered from 450°C to 410°C. As the plasma power is increased from 6.6 to 16W, the dislocation density peaks at lOW and then decreases with increasing power.

Low Temperature Preparation of High-Quality Pb(Zr,Ti)O3 Films by Metal Organic Chemical Vapor Deposition with High Reproducibility

2001 ◽  
Vol 688 ◽  
Author(s):  
Hiroshi Funakubo ◽  
Kuniharu Nagashima ◽  
Masanori Aratani ◽  
Kouji Tokita ◽  
Takahiro Oikawa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Process Window ◽  
High Quality ◽  
Low Temperature Preparation

AbstractPb(Zr,Ti)O3 (PZT) is one of the most promising materials for ferroelectric random access memory (FeRAM) application. Among the various preparation methods, metalorganic chemical vapor deposition (MOCVD) has been recognized as a most important one to realize high density FeRAM because of its potential of high-step-coverage and large-area-uniformity of the film quality.In the present study, pulsed-MOCVD was developed in which a mixture of the source gases was pulsed introduced into reaction chamber with interval. By using this deposition technique, simultaneous improvements of the crystallinity, surface smoothness, and electrical property of the film have been reached by comparing to the conventional continuous gas-supplied MOCVD. Moreover, this film had larger remanent polarization (Pr) and lower leakage current density. This is owing to reevaporation of excess Pb element from the film and increase of migration on the surface of substrate during the interval time.This process is also very effective to decrease the deposition temperature of the film having high quality. In fact, the Pr and the leakage current density of polycrystalline Pb(Zr0.35Ti0.65)O3 film deposited at 415 °C were 41.4 μC/cm2 and on the order of 10−7 A/cm2 at 200 kV/cm. This Pr value was almost the same as that of the epitaxially grown film deposited at 415 °C with the same composition corrected for the orientation difference. This suggests that the polycrystalline PZT film prepared by pulsed-MOCVD had the epitaxial-grade ferroelectric properties even through the deposition temperature was as low as 415 °C. Moreover, large “process window” comparable to the process window at 580 °C, above 150 °C higher temperature and was widely used condition, was achieved even at 395°C by the optimization of the deposition condition.

scholarly journals Growth Of Diamond By Rf Plasma Assisted Chemical Vapor Deposition

1989 ◽  
Author(s):  
Duane E. Meyer ◽  
Natale J. Ianno ◽  
John A. Woollam ◽  
A. B. Swartzlander ◽  
A. J. Nelson
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rf Plasma
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