Low temperature deposition and effect of plasma power on tin oxide thin films prepared by modified plasma enhanced chemical vapor deposition

2007 ◽  
Vol 102 (7) ◽  
pp. 073537 ◽  
Author(s):  
S. G. Ansari ◽  
M. A. Dar ◽  
M. S. Dhage ◽  
Young Soon Kim ◽  
Hyung-Shik Shin ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Power ◽  
Oxide Thin Films ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 1079-1082 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Ozeki ◽  
Eisuke Tokumitsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Metalorganic Chemical

Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.

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