Improvement of Contact Resistance Between Each Silver Nanowire and Thermal Stability of Silver Nanowire Transparent Electrodes by Electrodeposition

2018 ◽  
Vol 10 (4) ◽  
pp. 528-532 ◽  
Author(s):  
Jiseong Jang ◽  
Deok-Yong Park ◽  
Ki-Ha Hong ◽  
Soomin Song ◽  
Kihwan Kim ◽  
...  
2004 ◽  
Vol 810 ◽  
Author(s):  
Mark van Dal ◽  
Amal Akheyar ◽  
Jorge A. Kittl ◽  
Oxana Chamirian ◽  
Muriel De Pottera ◽  
...  

ABSTRACTEffects of alloying Ni with Pt and Ta on silicide properties for CMOS technology have been studied. It was found that Pt is soluble in NiSi, which is in line with literature, whereas Ta segregates towards the surface during thermal treatment. Additionally, Ta retards NiSi formation at low temperature. Thermal stability of NiSi on Si is improved more efficiently by alloying Ni with Pt compared to Ta. Silicide/diffusion contact resistance is extracted using the Transmission Line Structure. In our experiments, contact resistivity appeared to be virtually unaffected with respect to the alloying element. Thermal stability on narrow poly Si structures was also improved when Ni was alloyed with Pt. Similar leakage currents for Ni and Ni(Pt) silicides on N+ and P+ junctions were obtained. The results presented in this work suggest that Pt is a better candidate as alloying element to improve NiSi thermal stability for CMOS processes than Ta.


Author(s):  
Renyun Zhang ◽  
Magnus Engholm

Transparent electrodes (TEs) made of metallic nanowires, such as Ag, Au, Cu, and Ni, have attracted rising attention for several reasons: 1) they can act as a substitute for tin oxide-based TEs such as indium-tin oxide (ITO) and fluorine-doped tin oxide (FTO); 2) various methods exist for fabricating such TEs such as filtration, spraying and meyer bar coating; 3) greater compatibility with different substrates can be achieved due to the variety of fabrication methods; and 4) extra functions in addition to serving as electrodes, such as catalytic abilities, can be obtained due to the metals that compose the TEs. There are a large number of applications for TEs, ranging from electronics and sensors to biomedical devices. This short review is a summary of recent progress, mainly during the past five years, on silver nanowire-based TEs. The focus of the review will be on theory development, mechanical, chemical and thermal stability and optical properties. The many applications of TEs are outside the scope of this review.


Nanomaterials ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 628 ◽  
Author(s):  
Renyun Zhang ◽  
Magnus Engholm

Transparent electrodes (TEs) made of metallic nanowires, such as Ag, Au, Cu, and Ni, are attracting increasing attention for several reasons: (1) they can act as a substitute for tin oxide-based TEs such as indium-tin oxide (ITO) and fluorine-doped tin oxide (FTO); (2) various methods exist for fabricating such TEs such as filtration, spraying, and Meyer bar coating; (3) greater compatibility with different substrates can be achieved due to the variety of fabrication methods; and (4) extra functions in addition to serving as electrodes, such as catalytic abilities, can be obtained due to the metals of which the TEs are composed. There are a large number of applications for TEs, ranging from electronics and sensors to biomedical devices. This short review is a summary of recent progress, mainly over the past five years, on silver nanowire-based TEs. The focus of the review is on theory development, mechanical, chemical, and thermal stability as well as optical properties. The many applications of TEs are outside the scope of this review.


1994 ◽  
Vol 337 ◽  
Author(s):  
Patrick W Leech ◽  
Geoffrey K. Reeves

ABSTRACTThe electrical properties of Pd/Zn/Pd/Au based ohmic contacts to p-type In0 47Ga0 53As/ InP with an interposed superlattice of 50Å In047Gao 53As/ 50 Å InP have been investigated. In this study, several configurations of the Pd/Zn/Pd/Au metallization were fabricated with varying thicknesses of the Zn and interfacial Pd layers in the range 0 to 400 Å. The lowest values of specific contact resistance, ρc, were 1.2 x 10-5 Ω cm2 as-deposited and 7.5 x 106 Ω cm2 for samples annealed at 500 °C. In the as-deposited structures, ρc was reduced by an increase in thickness of both the Zn and Pd layers to 300 Å. For annealed samples, a critical thickness of the Zn ≥ 50 Å and Pd ≥ 100 Å layers was required in order to significantly reduce the magnitude of ρc. These results are consistent with a model of Pd/Zn contacts based on Zn doping of the interface. Studies of thermal stability of the contacts at 400 °C and 500 °C have shown that the Zn/Pd/Au and Pd/Zn/Pd/Au configurations were significanty lower in ρc at extended ageing times than the Pd/Au contacts.


2021 ◽  
Vol 21 (3) ◽  
pp. 1909-1914
Author(s):  
Ohmin Kwon ◽  
Chongmin Kim ◽  
Kiseok Jeong ◽  
Youngseok Kim

For this paper, we manufactured the 0.6/1 kV 3-core cable using metal-coated carbon fiber (MCF), which can be utilized for a cable screen layer. This cable can be applied to non-earthed system, and has a shielding property of more than 90% of braiding density. However, new joints and methods are needed to connect the cables because carbon fiber has brittleness. Thus, the cable connection added a spring to the contact surface, reducing resistance and fiber brittleness. These cables and connection methods were evaluated for safety in a certain temperature, humidity and over-current environments. From the results, the change of the external shape and contact resistance of the cable and the joint against the humidity and temperature were not significant, and the insulation breakdown did not occur in the withstanding voltage property of 3.5 kV for 5 min. No thermal deformation of the cable and connections was observed at the current above the allowable current range; it can be used as stable as metal screen cable.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

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