Effects of Alloying on Properties of NiSi for CMOS Applications

2004 ◽  
Vol 810 ◽  
Author(s):  
Mark van Dal ◽  
Amal Akheyar ◽  
Jorge A. Kittl ◽  
Oxana Chamirian ◽  
Muriel De Pottera ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Treatment ◽  
Low Temperature ◽  
Contact Resistance ◽  
Transmission Line ◽  
Cmos Technology ◽  
Contact Resistivity ◽  
Alloying Element ◽  
Leakage Currents ◽  
Thermal Stability Of

ABSTRACTEffects of alloying Ni with Pt and Ta on silicide properties for CMOS technology have been studied. It was found that Pt is soluble in NiSi, which is in line with literature, whereas Ta segregates towards the surface during thermal treatment. Additionally, Ta retards NiSi formation at low temperature. Thermal stability of NiSi on Si is improved more efficiently by alloying Ni with Pt compared to Ta. Silicide/diffusion contact resistance is extracted using the Transmission Line Structure. In our experiments, contact resistivity appeared to be virtually unaffected with respect to the alloying element. Thermal stability on narrow poly Si structures was also improved when Ni was alloyed with Pt. Similar leakage currents for Ni and Ni(Pt) silicides on N+ and P+ junctions were obtained. The results presented in this work suggest that Pt is a better candidate as alloying element to improve NiSi thermal stability for CMOS processes than Ta.

Mixed carbonyl-dinitrogen compounds: synthesis and thermal stability of Cr(CO)6-x(N2)x in liquid xenon solution and low-temperature matrixes

1983 ◽  
Vol 22 (6) ◽  
pp. 911-920 ◽  
Author(s):  
James J. Turner ◽  
Michael B. Simpson ◽  
Martyn Poliakoff ◽  
William B. Maier ◽  
Michael A. Graham
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Liquid Xenon ◽  
Thermal Stability Of

Easy Strategy to Enhance Thermal Stability of Planar PSCs by Perovskite Defect Passivation and Low-Temperature Carbon-Based Electrode

2020 ◽  
Vol 12 (29) ◽  
pp. 32536-32547
Author(s):  
Emanuele Calabrò ◽  
Fabio Matteocci ◽  
Barbara Paci ◽  
Lucio Cinà ◽  
Luigi Vesce ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Low Temperature ◽  
Defect Passivation ◽  
Thermal Stability Of ◽  
Carbon Based

scholarly journals Improvement of Thermal Stability of Nd-Tb-Fe-Co-B Sintered Magnets by Additions of Pr, Ho, Al, and Cu

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
A. A. Lukin ◽  
E. I. Il'yashenko ◽  
A. T. Skjeltorp ◽  
G. Helgesen
Keyword(s):  
Heat Treatment ◽  
Thermal Stability ◽  
Magnetic Properties ◽  
Thermal Treatment ◽  
Temperature Interval ◽  
Magnetic Parameters ◽  
Sintered Magnets ◽  
Additional Doping ◽  
As Solubility ◽  
Thermal Stability Of

The present work investigates the influence of Pr, Al, Cu, B and Ho which were introduced into the Co-containing sintered magnets of Nd-Dy-Tb-Fe-Co-B type on the magnetic parameters (α, Hci, Br, BHmax⁡). The effect of heat treatment parameters on magnetic properties was also studied. It was revealed that the essential alloying of NdFeB magnets by such elements as Dy, Tb, Ho, Co as well as by boron-forming elements, for example, by titanium, may lead to reducing of F-phase quantity, and, as a consequence, to decreasing of magnetic parameters. It was also shown that additional doping of such alloys by Pr, B, Al and Cu leads to a significant increase of the quantity of F-phase in magnets as well as solubility of the Dy, Tb, Ho and Co in it. This promotes the increase of magnetic parameters. It was possible to attain the following properties for the magnets (Nd0,15Pr0,35Tb0,25Ho0,25)15(Fe0,71Co0,29)bal ⋅ Al0,9Cu0,1B8,5 (at. %) after optimal thermal treatment {1175 K (3,6–7,2 ks) with slow (12–16 ks) cooling to 675 K and subsequently remaining at T=775 K for 3,6 ks—hardening}: Br=0,88 T, Hci=1760 kA/m, BHmax⁡=144 kJ/m3, α<|0,01|%/K in the temperature interval 223–323 K.

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Sign in / Sign up

Export Citation Format

Share Document