Novel 10-T Write Driver SRAM Design Using 45 nm CMOS Technology with Leakage Current Reduction Scheme for FPGA Routing Switch Architecture

2018 ◽  
Vol 13 (5) ◽  
pp. 775-787 ◽  
Author(s):  
S. Lakshmi Narayanan ◽  
Reeba Korah ◽  
A. Swarnalatha
2008 ◽  
Vol E91-C (4) ◽  
pp. 534-542 ◽  
Author(s):  
S.-i. O'UCHI ◽  
M. MASAHARA ◽  
K. ENDO ◽  
Y. LIU ◽  
T. MATSUKAWA ◽  
...  

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.


Author(s):  
Xiaonan Zhu ◽  
Hongliang Wang ◽  
Wenyuan Zhang ◽  
Hanzhe Wang ◽  
Xiaojun Deng ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document