High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition

2018 ◽  
Vol 13 (2) ◽  
pp. 214-220 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Cheng-Yu Zhao ◽  
Xingwei Ding ◽  
Jian-Hua Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Method

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yumi Kawamura ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Kazutoshi Murata ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Large Shift ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

AbstractIn this study, we deposited zinc oxide (ZnO) thin film by atomic layer deposition (ALD) as an active channel layer in thin film transistor (TFT) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD). The fabricated TFTs were annealed at various temperatures, in an oxygen ambient gas. The electrical properties of TFTs with PA-ALD ZnO film annealed at the temperature up to 400[oC] improved without any degradation of the subthreshold swing or any large shift of the threshold voltage. Through this study, we found that the high performance ZnO TFTs is possibly obtained using PA-ALD at low temperature, and the electrical properties are dependent on the annealing temperature.

scholarly journals Atomic Layer Deposition ZnO:N Thin Film Transistor: The Effects of N Concentration on the Device Properties

2010 ◽  
Vol 157 (2) ◽  
pp. H214 ◽  
Author(s):  
S. J. Lim ◽  
Jae-Min Kim ◽  
Doyoung Kim ◽  
Soonju Kwon ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
N Concentration ◽  
Layer Deposition ◽  
Device Properties
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