scholarly journals High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

2007 ◽  
Vol 91 (18) ◽  
pp. 183517 ◽  
Author(s):  
S. J. Lim ◽  
Soon-ju Kwon ◽  
Hyungjun Kim ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Nitrogen Doped ◽  
Layer Deposition ◽  
Doped Zno

Nitrogen-Doped ZnO Film Fabricated Via Rapid Low-Temperature Atomic Layer Deposition for High-Performance ZnON Transistors

2018 ◽  
Vol 65 (8) ◽  
pp. 3283-3290 ◽  
Author(s):  
Xingwei Ding ◽  
Jun Yang ◽  
Cunping Qin ◽  
Xuyong Yang ◽  
Tao Ding ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Zno Film ◽  
Nitrogen Doped ◽  
Layer Deposition ◽  
Doped Zno

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92534-92540 ◽  
Author(s):  
Eom-Ji Kim ◽  
Won-Ho Lee ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Voltage Control ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Doped Zno ◽  
Active Channel

We proposed a methodology for controlling the threshold voltage by adjusting the position of the Al dopant layer within an Al-doped-ZnO active channel of a thin film transistor.

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