High performance transparent thin film transistor with atomic layer deposition ZnO based active channel layer

2010 ◽  
Author(s):  
Hyungjun Kim ◽  
S. J. Lim ◽  
Jae-Min Kim ◽  
Do Young Kim
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Channel Layer ◽  
Layer Deposition ◽  
Active Channel ◽  
Transparent Thin Film Transistor

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92534-92540 ◽  
Author(s):  
Eom-Ji Kim ◽  
Won-Ho Lee ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Voltage Control ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Doped Zno ◽  
Active Channel

We proposed a methodology for controlling the threshold voltage by adjusting the position of the Al dopant layer within an Al-doped-ZnO active channel of a thin film transistor.

Atomic layer deposition of Zn3N2 thin films: growth mechanism and application in thin film transistor

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Dft Study ◽  
Channel Layer ◽  
Layer Deposition

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.

Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films

2017 ◽  
Vol 5 (12) ◽  
pp. 3139-3145 ◽  
Author(s):  
Soo Hyun Kim ◽  
In-Hwan Baek ◽  
Da Hye Kim ◽  
Jung Joon Pyeon ◽  
Taek-Mo Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
High Performance ◽  
Atomic Layer ◽  
Channel Layer ◽  
Layer Deposition ◽  
P Type

Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO channel layer grown by atomic layer deposition (ALD).

ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Method

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yumi Kawamura ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Kazutoshi Murata ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Large Shift ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

AbstractIn this study, we deposited zinc oxide (ZnO) thin film by atomic layer deposition (ALD) as an active channel layer in thin film transistor (TFT) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD). The fabricated TFTs were annealed at various temperatures, in an oxygen ambient gas. The electrical properties of TFTs with PA-ALD ZnO film annealed at the temperature up to 400[oC] improved without any degradation of the subthreshold swing or any large shift of the threshold voltage. Through this study, we found that the high performance ZnO TFTs is possibly obtained using PA-ALD at low temperature, and the electrical properties are dependent on the annealing temperature.

High Performance ZnSnO Thin Film Transistor with ZrO2 Gate Insulator Formed by Atomic Layer Deposition

2018 ◽  
Vol 13 (2) ◽  
pp. 214-220 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Cheng-Yu Zhao ◽  
Xingwei Ding ◽  
Jian-Hua Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition
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