Solution Processed Hafnium Oxide Doped Siloxane Dielectrics for a Thin Film Transistor with Reduced Graphene Oxide Channel on Flexible Substrate

2017 ◽  
Vol 17 (10) ◽  
pp. 7423-7428
Author(s):  
Yo-Han Kim ◽  
Hunsang Jung ◽  
Kyungmin Lee ◽  
Tae-Sik Yoon ◽  
Hyun Ho Lee
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Hafnium Oxide ◽  
Flexible Substrate ◽  
Thin Film Transistor ◽  
Solution Processed ◽  
Reduced Graphene

scholarly journals Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Yo-Han Kim ◽  
Huynh Quoc Nguyen ◽  
Bum Jun Park ◽  
Hyun Ho Lee ◽  
Tae Seok Seo
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Flat Band ◽  
Threshold Voltage Shift ◽  
Au Nps ◽  
Voltage Shift ◽  
Reduced Graphene

In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.

Reduced graphene oxide/molecular imprinted polymer-organic thin film transistor for amino acid detection

2017 ◽  
Author(s):  
Nurul Farhanah AB. Halim ◽  
Nur Hazwani Musa ◽  
Zulkhairi Zakaria ◽  
Mubaraq Von Schleusingen ◽  
Mohd Noor Ahmad ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Amino Acid ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Molecular Imprinted Polymer ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Imprinted Polymer ◽  
Reduced Graphene

Fabrication and Evaluation of Solution-Processed Reduced Graphene Oxide Electrodes for p- and n-Channel Bottom-Contact Organic Thin-Film Transistors

ACS Nano ◽  
2010 ◽  
Vol 4 (11) ◽  
pp. 6343-6352 ◽  
Author(s):  
Héctor A. Becerril ◽  
Randall M. Stoltenberg ◽  
Ming Lee Tang ◽  
Mark E. Roberts ◽  
Zunfeng Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Oxide Electrodes ◽  
Reduced Graphene ◽  
Channel Bottom

Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films

2010 ◽  
Vol 22 (43) ◽  
pp. 4872-4876 ◽  
Author(s):  
Haixin Chang ◽  
Zhenhua Sun ◽  
Qinghong Yuan ◽  
Feng Ding ◽  
Xiaoming Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Field Effect ◽  
Oxide Films ◽  
Solution Processed ◽  
Reduced Graphene
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