Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor

2017 ◽  
Vol 9 (19) ◽  
pp. 16375-16380 ◽  
Author(s):  
Yo-Han Kim ◽  
Eun Yeol Lee ◽  
Hyun Ho Lee ◽  
Tae Seok Seo
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Reduced Graphene ◽  
Graphene Oxide Quantum Dots

Blue and green luminescence of reduced graphene oxide quantum dots

Carbon ◽  
2013 ◽  
Vol 63 ◽  
pp. 537-546 ◽  
Author(s):  
Václav Štengl ◽  
Snejana Bakardjieva ◽  
Jiří Henych ◽  
Kamil Lang ◽  
Martin Kormunda
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Green Luminescence ◽  
Reduced Graphene ◽  
Graphene Oxide Quantum Dots

scholarly journals Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Yo-Han Kim ◽  
Huynh Quoc Nguyen ◽  
Bum Jun Park ◽  
Hyun Ho Lee ◽  
Tae Seok Seo
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Flat Band ◽  
Threshold Voltage Shift ◽  
Au Nps ◽  
Voltage Shift ◽  
Reduced Graphene

In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.

The photoluminescence of step-wise reduced graphene oxide quantum dots

2018 ◽  
Vol 203 ◽  
pp. 125-132 ◽  
Author(s):  
Yue Dong ◽  
Su Zhang ◽  
Liluo Shi ◽  
Yaxin Chen ◽  
Jing Ma ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Reduced Graphene ◽  
Graphene Oxide Quantum Dots

Enhanced mobility and controlled transparency in multilayered reduced graphene oxide quantum dots: a charge transport study

2019 ◽  
Vol 30 (27) ◽  
pp. 275701 ◽  
Author(s):  
Mawin J M Jimenez ◽  
Rafael F de Oliveira ◽  
Carlos César B Bufon ◽  
Marcelo A Pereira-da-Silva ◽  
Varlei Rodrigues ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Charge Transport ◽  
Reduced Graphene Oxide ◽  
Transport Study ◽  
Reduced Graphene ◽  
Enhanced Mobility ◽  
A Charge ◽  
Graphene Oxide Quantum Dots

High-performance solar-blind photodetector with graphene and nitrogen-doped reduced graphene oxide quantum dots (rGOQDs)

2018 ◽  
Vol 8 (1) ◽  
pp. 105-111 ◽  
Author(s):  
Enliang Zhang ◽  
Tai Sun ◽  
Bangtong Ge ◽  
Weiguo Zhang ◽  
Xuan Gao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
High Performance ◽  
Nitrogen Doped ◽  
Reduced Graphene ◽  
Solar Blind ◽  
Graphene Oxide Quantum Dots
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