Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

2017 ◽  
Author(s):  
Nurhazwani Musa ◽  
Nurul Farhanah Ab. Halim ◽  
Mohd Noor Ahmad ◽  
Zulkhairi Zakaria ◽  
Uda Hashim
2017 ◽  
Author(s):  
Nurul Farhanah AB. Halim ◽  
Nur Hazwani Musa ◽  
Zulkhairi Zakaria ◽  
Mubaraq Von Schleusingen ◽  
Mohd Noor Ahmad ◽  
...  

2008 ◽  
Vol 46 (15) ◽  
pp. 5115-5122 ◽  
Author(s):  
Yinam Li ◽  
Tae‐Hoon Kim ◽  
Qinghua Zhao ◽  
Euh‐Kyung Kim ◽  
Seung‐Hon Han ◽  
...  

2014 ◽  
Vol 14 (8) ◽  
pp. 5942-5946 ◽  
Author(s):  
Hui-Jun Yun ◽  
Jong-Man Park ◽  
Chan Woo Jeon ◽  
Sang Yong Nam ◽  
Sung-Chul Shin ◽  
...  

2011 ◽  
Vol 23 (10) ◽  
pp. 1172-1172 ◽  
Author(s):  
Christopher J. Bettinger ◽  
Hector A. Becerril ◽  
Do Hwan Kim ◽  
Bang-Lin Lee ◽  
Sangyoon Lee ◽  
...  

2005 ◽  
Vol 6 (4) ◽  
pp. 1-5
Author(s):  
Hyung‐Sun Kim ◽  
Sung‐Ouk Jung ◽  
Yun‐Hi Kima ◽  
Lee‐Mi Do ◽  
Soon‐Ki Kwona

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Yo-Han Kim ◽  
Huynh Quoc Nguyen ◽  
Bum Jun Park ◽  
Hyun Ho Lee ◽  
Tae Seok Seo

In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.


2015 ◽  
Vol 178 ◽  
pp. 45-54 ◽  
Author(s):  
Rosaria Anna Picca ◽  
Maria Chiara Sportelli ◽  
Diana Hötger ◽  
Kyriaki Manoli ◽  
Christine Kranz ◽  
...  

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