Reduced graphene oxide/molecular imprinted polymer-organic thin film transistor for amino acid detection

2017 ◽  
Author(s):  
Nurul Farhanah AB. Halim ◽  
Nur Hazwani Musa ◽  
Zulkhairi Zakaria ◽  
Mubaraq Von Schleusingen ◽  
Mohd Noor Ahmad ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Amino Acid ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Molecular Imprinted Polymer ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Imprinted Polymer ◽  
Reduced Graphene

scholarly journals Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Yo-Han Kim ◽  
Huynh Quoc Nguyen ◽  
Bum Jun Park ◽  
Hyun Ho Lee ◽  
Tae Seok Seo
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Flat Band ◽  
Threshold Voltage Shift ◽  
Au Nps ◽  
Voltage Shift ◽  
Reduced Graphene

In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.

Serine Sensor Based on Graphene Sheet Congo-Red Molecular Imprinted Polymer (GSCR-MIP) Organic Thin Film Transistor (OTFT)

2014 ◽  
Vol 925 ◽  
pp. 500-504 ◽  
Author(s):  
Nurul Farhanah Ab. Halim ◽  
M.Noor Ahmad ◽  
A.K.M. Shafiqul Islam ◽  
A. Yeon Md. Shakaff ◽  
Zulkhairi Zakaria ◽  
...  
Keyword(s):  
Congo Red ◽  
Chemical Sensor ◽  
Thin Film Transistor ◽  
Molecular Imprinted Polymer ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Imprinted Polymer ◽  
Front End ◽  
Sensor Fabrication ◽  
With Memory

Molecular imprinted is a technique to produce template-shape cavities in polymer matrix with memory of the template/target molecule for chemical sensor front-end. In this study, it has been shown that the incorporation of graphene sheets/Congo red (GSCR) has enhanced the performance of molecular imprinted polymer (MIP) serine sensor. The polymer is formed via photo-polymerization from methyl methacrylate acid (functional monomer), serine (template) and ethylene glycol dimethacrylate (cross-linker) together with GSCR. By introducing GSCR-MIP, GSCR-MIP OTFT chemical sensor demonstrates a good response when serine is introduced. The performance of GSCR-MIP OTFT serine sensor can be improved through the addition of GSCR, thus GSCR-MIP has high potentials for application in sensor fabrication.

Fabrication and Evaluation of Solution-Processed Reduced Graphene Oxide Electrodes for p- and n-Channel Bottom-Contact Organic Thin-Film Transistors

ACS Nano ◽  
2010 ◽  
Vol 4 (11) ◽  
pp. 6343-6352 ◽  
Author(s):  
Héctor A. Becerril ◽  
Randall M. Stoltenberg ◽  
Ming Lee Tang ◽  
Mark E. Roberts ◽  
Zunfeng Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Oxide Electrodes ◽  
Reduced Graphene ◽  
Channel Bottom
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